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Spin transport across oxide semiconductors and antiferromagnetic oxide interfaces

PhD ceremony:Mr A. Das
When:January 15, 2021
Start:12:45
Supervisors:T. (Tamalika) Banerjee, Prof, prof. dr. ir. B.J. (Bart) van Wees
Where:Academy building RUG
Faculty:Science and Engineering
Spin transport across oxide semiconductors and antiferromagnetic
oxide interfaces

Strong correlated interplay of spin, orbital and lattice degrees of freedom in complex oxide materials, both in their bulk as well as at their heterointerfaces lead to emergent phenomena, that are often unlike those found in other material systems. Such an interplay is brought by a cumulative interaction of the lattice distortion, induced strain, and different types of symmetry breaking, enabling effective control and engineering across oxide interfaces, and has led to the observation of unconventional electronic transport, magnetism, ferroelectricity, and superconductivity.

This thesis studies functionally important complex oxide platforms for spin transport and explores, (i) Integration of non-volatile memory functionalities on complex oxide semiconducting Nb-doped SrTiO3 (STO) for complementary memory and logic operation, (ii) Probing magnetic properties in thin-film antiferromagnetic insulator SrMnO3 (SMO), with an outlook to integrate them for future antiferromagnetic spintronics and magnonics applications based on complex oxides.