N. Tien Son: Silicon Carbide for Spintronics
|When:||Th 22-09-2016 11:00 - 12:00|
Unpaired electrons at an electronic defect in solids possess an intrinsic angular momentum, often called spin. Single spins can be prepared in an arbitrary state and are basic elements for quantum computing where states of spins are used as quantum bits (qubits). Leading contenders such as defects in diamond or individual phosphorus dopants in silicon have shown spectacular progress, but either lack established nanotechnology or an efficient spin/photon interface. Silicon carbide (SiC) combines the strength of both systems: it has deep photoluminescence defects and benefits from mature fabrication techniques. This talk will give an overview on deep intrinsic and impurity-related colour centers in SiC that possess optical and spin properties suitable for qubits and nanosensing. As examples, the realization and manipulation of single spins associated with the Si vacancies and divacancies in SiC are presented.