Saroj Prasad Dasharcos H.D.: Creation and Control of Spin Current in 2D materials heterostructures

Two-dimensional (2D) materials offer an unique platform due to their remarkable and contrasting spintronic properties. We reported a long distance spin transport over 16 μm and spin lifetimes up to 1.2 ns in large area CVD graphene at room temperature [1]. In order to achieve an efficient spin injection into graphene, we used multilayer CVD h-BN tunnel barriers with large negative tunnel spin polarization up to 65 % at room temperature [2]. Furthermore, we combined graphene and MoS2 in a van der Waals heterostructure to demonstrate the electric gate control of the spin current at room temperature [3]. These findings demonstrate all-electrical spintronic devices at room temperature with the creation, transport and control of the spin current in 2D materials heterostructures.