Tamalika Banerjee and colleagues demonstrated the ability to manipulate the spin state in an oxide semiconductor in their latest publication in Physical Review Letters

The ability to manipulate the spin state in semiconductors, at room temperature, is challenging and necessary for next generation spintronic devices. In this work (PRL 115, 136601, 2015) researchers at the Physics of Nanodevices group (Banerjee group) have demonstrated the ability to manipulate the spin state in an oxide semiconductor, using electric field via Rashba spin orbit coupling. This opens a novel route to develop a spin-logic device without the need of additional gate electrode and furthers application possibilities in spintronics using such correlated oxide materials.
Last modified: | 02 October 2015 12.16 p.m. |
More news
-
02 July 2025
Relinde Weil reappointed as a member of the Supervisory Board UG
The Minister of Education has reappointed Relinde Weil for a second term as a member of the Supervisory Board of the University of Groningen.
-
01 July 2025
Khalaf Alkhalaf elected Alumnus of the Year 2025
Khalaf Alkhalaf has been elected Alumnus of the Year 2025 by the University of Groningen. He has received the award for his commitment to providing good care and guidance to refugees in the Netherlands and the inspiring way in which he shares his...