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Maria Antonietta Loi's Field-Effect Transistors highlighted on Advanced Electronic Materials Cover

17 August 2015
Field-Effect Transistors on Advanced Electronic Materials Cover
Field-Effect Transistors on Advanced Electronic Materials Cover

In the article Field-Effect Transistors: Selecting Semiconducting Single-Walled Carbon Nanotubes with Narrow Bandgap Naphthalene Diimide-Based Polymers (Adv. Electron. Mater. 8/2015; Authors: Jorge Mario Salazar-Rios, Widianta Gomulya, Vladimir Derenskyi, Jie Yang, Satria Zulkarnaen Bisri, Zhihua Chen, Antonio Facchetti and Maria Antonietta Loi) Maria Antonietta Loi and co-workers describe a transistor structure where a network of semiconducting single-walled carbon nanotubes connects the source and drain gold electrodes and a naphthalene diimide-based conjugated polymer (PE-N-73) is wrapped around the tubes to keep them individualized. The sparks allocated in the junctions between the tubes in the inside cover image portray the charge hopping from one tube to the other, which is not diminished by the presence of PE-N-73.

Article first published online: 17 AUG 2015 | DOI: 10.1002/aelm.201570027

Last modified:25 August 2015 10.20 a.m.

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