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ResearchZernike (ZIAM)Device Physics of Complex MaterialsYe Group

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Full superconducting dome of strong Ising protection in gated monolayer WS2

Compared with 3D superconductors, atomically thin superconductors are expected to be easier to engineer for electronic applications. Here, we use field effect gating to induce superconductivity in a monolayer semiconducting transition metal dichalcogenide, WS2, grown by chemical vapor deposition. The remarkable doping range allows access to a cascade of electronic phases from a band insulator, a superconductor, to a reentrant insulator at high doping. The large spin-orbit coupling of ∼30 meV makes the Ising paring in WS2arguably the most strongly protected superconducting state against external magnetic field. The wide tunability revealed by spanning over a complete superconducting dome paves the way for the integration of monolayer superconductors to functional electronic devices exploiting the field effect control of quantum phases.

Schematic illustration of a WS2 monolayer transistor gated with both ion liquid VTG and solid back VBG gates
Schematic illustration of a WS2 monolayer transistor gated with both ion liquid VTG and solid back VBG gates
Last modified:22 February 2019 10.17 a.m.