J. (Jianting) Ye, Prof

Education

Department of Physics, Hong Kong University of Science and Technology, Hong Kong

• 2004.9 - 2006.8    Doctor of Philosophy (in Physics)

• 2000.9 - 2002.8    Master of Philosophy (in Physics)

Department of Physics, Zhejiang University, Hangzhou, China

• 1996.9 – 2000.6    Bachelor of Science (in Physics)

Employment

Zernike Institute for Advanced Materials, University of Groningen

Full Professor                           2022. 8 – 

Associate Professor                 2013. 11 – 2022. 7

Center for Emergent Matter Science, RIKEN

Senior Research Scientist         2013. 7 – 2013. 10

Quantum-Phase Electronics Center and Department of Applied Physics,

The University of Tokyo

Lecturer                                  2011. 6 – 2013. 6

Assistant Professor                   2010. 6 – 2011. 5

Institute for International Advanced Interdisciplinary Research,

Tohoku University

Assistant Professor                   2008. 10 – 2010. 5

Institute for Materials Research, Tohoku University

Postdoctoral Scholar (Global COE fellow)       2007. 10 – 2008. 9

Institute of Nano Science and Technology and Department of Physics, 

Hong Kong University of Science and Technology

Postdoctoral Research Associate                  2006. 9 – 2007. 9

Visiting Scholar                                          2002. 12 – 2004. 9

Selected Publications

1. O. Zheliuk, J. M. Lu, Q. H. Chen, A. A. E. Yumin, S. Golightly, and J. T. Ye, "Josephson coupled Ising pairing induced in suspended MoS₂ bilayers by double-side ionic gating", Nature Nanotechnology 14, 1123 (2019).
2. J. M. Lu, O. Zheliuk, Q. Chen, I. Leermakers, N. E. Hussey, U. Zeitler, and J. T. Ye, "Full superconducting dome of strong Ising protection in gated monolayer WS₂", Proceedings of the National Academy of Sciences 115, 3551 (2018).

3. J. M. Lu, O. Zheliuk, I. Leermakers, Noah F. Q. Yuan, U. Zeitler, K. T. Law, and J. T. Ye, “Two Dimensional Ising Superconductivity in Gated MoS₂”, Science  350, 1353 (2015).

4. Y. Saito, Y. Nakamura, M. S. Bahramy, Y. Kohama, J. T. Ye, Y. Kasahara, et al. “Superconductivity protected by spin-valley locking in ion-gated MoS₂”, Nature Physics 1 2, 144 (2016).

5. Y. Saito, Y. Kasahara, J. T. Ye, Y. Iwasa, and T. Nojima, “Metallic Ground State in an Ion-gated Two-dimensional Superconductor”, Science 350, 409 (2015). 

6. Y. J. Zhang, T. Oka, R. Suzuki, J. T. Ye, and Y. Iwasa, “Electrically Switchable Chiral Light-Emitting Transistor” Science 344, 725 (2014).

7. Y. J. Zhang, J. T. Ye, Y. Yomogida, T. Takenobu, and Y. Iwasa, "Formation of a stable p-n junction in a liquid-gated MoS₂ ambipolar transistor. Nano Lett . 13, 3023-3028 (2013).

8. J. T. Ye, Y. J. Zhang, R. Akashi, M. S. Bahramy, R. Arita, and Y. Iwasa, “Superconducting Dome in a Gate Tuned Band Insulator”, Science  338, 1193 (2012).

9. J. G. Checkelsky, J. T. Ye, Y. Onose, Y. Iwasa, and Y. Tokura, “Dirac-fermion-mediated ferromagnetism in a topological insulator”, Nature Physics 8, 729 (2012).

10. J. T. Ye, M. F. Craciun, M. Koshino, S. Russo, S. Inoue, H. T. Yuan, H. Shimotani, A. F. Morpurgo, and Y. Iwasa, “Accessing the transport properties of graphene and its multi-layers at high carrier density” Proceedings of the National Academy of Sciences  108,13002 (2011).

11. J. T. Ye, S. Inoue, K. Kobayashi, Y. Kasahara, H. T. Yuan, H. Shimotani, and Y. Iwasa, “Liquid-gated interface superconductivity on an atomically flat film”, Nature Materials  9, 125 (2010).

12. R. Lortz, Q. Zhang, W. Shi, J. T. Ye, C. Y. Qiu, Z. Wang, H. T. He, P. Sheng, T. Z. Qian, Z. K. Tang, N. Wang, X. X. Zhang, J. N. Wang, and C. T. Chan, “Superconducting characteristics of 4-Å carbon nanotube–zeolite composite”, Proceedings of the National Academy of Sciences  106, 7299 (2009).