prof. dr. J. Ye

Personal Particulars

Name: (Justin) Jianting Ye

Date and place of birth: 11/04/77 Ningbo, China

Nationality: China (HKSAR)

Education

Department of Physics, Hong Kong University of Science and Technology, Hong Kong

• 2004.9 - 2006.8    Doctor of Philosophy (in Physics)

• 2000.9 - 2002.8    Master of Philosophy (in Physics)

Department of Physics, Zhejiang University, Hangzhou, China

• 1996.9 – 2000.6    Bachelor of Science (in Physics)

Employments

Zernike Institute for Advanced Materials, University of Groningen

Associate Professor                 2013. 11 – present

Center for Emergent Matter Science, RIKEN

Senior Research Scientist         2013. 7 – 2013. 10

Quantum-Phase Electronics Center and Department of Applied Physics,

The University of Tokyo

Lecturer                                  2011. 6 – 2013. 6

Assistant Professor                   2010. 6 – 2011. 5

Institute for International Advanced Interdisciplinary Research,

Tohoku University

Assistant Professor                   2008. 10 – 2010. 5

Institute for Materials Research, Tohoku University

Postdoctoral Scholar (Global COE fellow)       2007. 10 – 2008. 9

Institute of Nano Science and Technology and Department of Physics, 

Hong Kong University of Science and Technology

Postdoctoral Research Associate                  2006. 9 – 2007. 9

Visiting Scholar                                          2002. 12 – 2004. 9

Selected Publications

1. J. M. Lu, O. Zheliuk, I. Leermakers, Noah F. Q. Yuan, U. Zeitler, K. T. Law, and J. T. Ye, “Two Dimensional Ising Superconductivity in Gated MoS2”, Science 350, 1353 (2015).

2. Y. Saito, Y. Nakamura, M. S. Bahramy, Y. Kohama, J. T. Ye, Y. Kasahara, et al. “Superconductivity protected by spin-valley locking in ion-gated MoS2”, Nature Physics 12, 144 (2016).

3. Y. Saito, Y. Kasahara, J. T. Ye, Y. Iwasa, T. Nojima, “Metallic Ground State in an Ion-gated Two-dimensional Superconductor”, Science 350, 409 (2015). 

4. Y. J. Zhang, T. Oka, R. Suzuki, J. T. Ye, and Y. Iwasa, “Electrically Switchable Chiral Light-Emitting Transistor” Science 344, 725 (2014).

5. Y. J. Zhang, J. T. Ye, Y. Yomogida, T. Takenobu and Y. Iwasa, "Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor. Nano Lett. 13, 3023-3028 (2013).

6. J. T. Ye, Y. J. Zhang, R. Akashi, M. S. Bahramy, R. Arita, and Y. Iwasa, “Superconducting Dome in a Gate Tuned Band Insulator”, Science 338, 1193 (2012).

7. J. G. Checkelsky, J. T. Ye, Y. Onose, Y. Iwasa and Y. Tokura, “Dirac-fermion-mediated ferromagnetism in a topological insulator”, Nature Physics 8, 729 (2012).

8. J. T. Ye, M. F. Craciun, M. Koshino, S. Russo, S. Inoue, H. T. Yuan, H. Shimotani, A. F. Morpurgo and Y. Iwasa, “Accessing the transport properties of graphene and its multi-layers at high carrier density” PNAS 108,13002 (2011).

9. J. T. Ye, S. Inoue, K. Kobayashi, Y. Kasahara, H. T. Yuan, H. Shimotani, and Y. Iwasa, “Liquid-gated interface superconductivity on an atomically flat film”, Nature Materials 9, 125 (2010).

10. R. Lortz, Q. Zhang, W. Shi, J. T. Ye, C. Y. Qiu, Z. Wang, H. T. He, P. Sheng, T. Z. Qian, Z. K. Tang, N. Wang, X. X. Zhang, J. N. Wang, and C. T. Chan, “Superconducting characteristics of 4-Å carbon nanotube–zeolite composite”, PNAS 106, 7299 (2009).