prof. dr. J. Ye

Personal Particulars
Name: (Justin) Jianting Ye
Date and place of birth: 11/04/77 Ningbo, China
Nationality: China (HKSAR)
Education
Department of Physics, Hong Kong University of Science and Technology, Hong Kong
• 2004.9 - 2006.8 Doctor of Philosophy (in Physics)
• 2000.9 - 2002.8 Master of Philosophy (in Physics)
Department of Physics, Zhejiang University, Hangzhou, China
• 1996.9 – 2000.6 Bachelor of Science (in Physics)
Employments
Zernike Institute for Advanced Materials, University of Groningen
Associate Professor 2013. 11 – present
Center for Emergent Matter Science, RIKEN
Senior Research Scientist 2013. 7 – 2013. 10
Quantum-Phase Electronics Center and Department of Applied Physics,
The University of Tokyo
Lecturer 2011. 6 – 2013. 6
Assistant Professor 2010. 6 – 2011. 5
Institute for International Advanced Interdisciplinary Research,
Tohoku University
Assistant Professor 2008. 10 – 2010. 5
Institute for Materials Research, Tohoku University
Postdoctoral Scholar (Global COE fellow) 2007. 10 – 2008. 9
Institute of Nano Science and Technology and Department of Physics,
Hong Kong University of Science and Technology
Postdoctoral Research Associate 2006. 9 – 2007. 9
Visiting Scholar 2002. 12 – 2004. 9
Selected Publications
-
J. M. Lu, O. Zheliuk, I. Leermakers, Noah F. Q. Yuan, U. Zeitler, K. T. Law, and J. T. Ye, “Two Dimensional Ising Superconductivity in Gated MoS2”, Science 350, 1353 (2015).
-
Y. Saito, Y. Nakamura, M. S. Bahramy, Y. Kohama, J. T. Ye, Y. Kasahara, et al. “Superconductivity protected by spin-valley locking in ion-gated MoS2”, Nature Physics 12, 144 (2016).
-
Y. Saito, Y. Kasahara, J. T. Ye, Y. Iwasa, T. Nojima, “Metallic Ground State in an Ion-gated Two-dimensional Superconductor”, Science 350, 409 (2015).
-
Y. J. Zhang, T. Oka, R. Suzuki, J. T. Ye, and Y. Iwasa, “Electrically Switchable Chiral Light-Emitting Transistor” Science 344, 725 (2014).
-
Y. J. Zhang, J. T. Ye, Y. Yomogida, T. Takenobu and Y. Iwasa, "Formation of a stable p-n junction in a liquid-gated MoS2 ambipolar transistor. Nano Lett. 13, 3023-3028 (2013).
-
J. T. Ye, Y. J. Zhang, R. Akashi, M. S. Bahramy, R. Arita, and Y. Iwasa, “Superconducting Dome in a Gate Tuned Band Insulator”, Science 338, 1193 (2012).
-
J. G. Checkelsky, J. T. Ye, Y. Onose, Y. Iwasa and Y. Tokura, “Dirac-fermion-mediated ferromagnetism in a topological insulator”, Nature Physics 8, 729 (2012).
-
J. T. Ye, M. F. Craciun, M. Koshino, S. Russo, S. Inoue, H. T. Yuan, H. Shimotani, A. F. Morpurgo and Y. Iwasa, “Accessing the transport properties of graphene and its multi-layers at high carrier density” PNAS 108,13002 (2011).
-
J. T. Ye, S. Inoue, K. Kobayashi, Y. Kasahara, H. T. Yuan, H. Shimotani, and Y. Iwasa, “Liquid-gated interface superconductivity on an atomically flat film”, Nature Materials 9, 125 (2010).
-
R. Lortz, Q. Zhang, W. Shi, J. T. Ye, C. Y. Qiu, Z. Wang, H. T. He, P. Sheng, T. Z. Qian, Z. K. Tang, N. Wang, X. X. Zhang, J. N. Wang, and C. T. Chan, “Superconducting characteristics of 4-Å carbon nanotube–zeolite composite”, PNAS 106, 7299 (2009).
Last modified: | 27 February 2018 09.58 a.m. |