Quantum transport in molybdenum disulfide and germanane transistors

In the past decades, electronic devices are getting smaller and more powerful, following the Moore’s Law. Nevertheless, silicon-based field effect transistors are rapidly approaching their scaling limit. Thus, exploring new channel materials as well as novel device architectures are highly demanded for the further miniaturization. Among the new materials, molybdenum disulfide (MoS₂) and germanane (GeH) are two attractive candidates for developing next-generation electronic devices. The most interesting properties about MoS₂ and GeH are their layered crystal structures and semiconducting characteristics. Hence, they can be easily thinned down to a few atomic layers and made into two-dimensional transistors.

This thesis focuses on studying the electronic properties of MoS₂ and GeH. For MoS₂, new device structure is implemented combing solid stating and ionic gating, which is even efficient enough to induce superconductivity in MoS₂. Based on this novel device structure, transistors with both superconductivity and high mobility electrons are fabricated, which could be potentially used in high-speed and low energy consumption device applications. For the study of GeH, a prototype of GeH-based field effect transistor is demonstrated. Since Germanium is a widely used semiconductor, the GeH transistor prototype is highly compatible with current semiconductor technology.

Dissertation: http://hdl.handle.net/11370/82f1e071-4959-41f1-ac78-a668364eedca