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Over ons Praktische zaken Waar vindt u ons prof. dr. ir. C.H. (Caspar) van der Wal

prof. dr. ir. C.H. (Caspar) van der Wal

Professor in Physics of Quantum Devices

Profielfoto van prof. dr. ir. C.H. (Caspar) van der Wal

Faculteit Science and Engineering

Telefoon:

050 36 34555 (Secr. Mrs. Marleen de Koff, tel. +31 50 363 4974)

E-mail:

c.h.van.der.wal rug.nl

Homepage ORCID Research Portal

Publicaties

Charge dynamics in the 2D/3D semiconductor heterostructure WSe$_2$/GaAs

Rojas-Lopez, R. R., Hendriks, F., Wal, C. H. V. D., Guimarães, P. S. S. & Guimarães, M. H. D., 25-sep.-2023, (Submitted) arXiv, 7 blz.

Onderzoeksoutput: Voordruk ›

Magnetic field control of light-induced spin accumulation in monolayer MoSe2

Rojas-Lopez, R. R., Hendriks, F., van der Wal, C. H., Guimarães, P. S. S. & Guimarães, M. H. D., jul.-2023, In: 2D Materials. 10, 3, 7 blz., 035013.

Onderzoeksoutput › › peer review

Broadband single-mode planar waveguides in monolithic 4H-SiC

Bosma, T., Hendriks, J., Ghezellou, M., Son, N. T., Ul-Hassan, J. & Wal, C. H. V. D., 14-jan.-2022, In: Journal of Applied Physics. 131, 2, 10 blz., 025703 .

Onderzoeksoutput › › peer review

Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC

Zwier, O. V., Bosma, T., Gilardoni, C. M., Yang, X., Onur, A. R., Ohshima, T., Son, N. T. & Wal, C. H. V. D., 18-mrt.-2022, In: Journal of Applied Physics. 131, 9 blz., 094401.

Onderzoeksoutput › › peer review

Hyperfine-mediated transitions between electronic spin-1/2 levels of transition metal defects in SiC

Maia Gilardoni, C., Ion, I., Hendriks, F., Trupke, M. & van der Wal, C., 5-aug.-2021, In: New Journal of Physics. 23, 17 blz., 083010.

Onderzoeksoutput › › peer review

Symmetry and Control of Spin-Scattering Processes in Two-Dimensional Transition Metal Dichalcogenides

Gilardoni, C. M., Hendriks, F., Wal, C. H. V. D. & Guimarães, M. H. D., 5-mrt.-2021, In: Physical Review. B: Condensed Matter and Materials Physics. 103, 11, 9 blz., 115410.

Onderzoeksoutput › › peer review

The role of device asymmetries and Schottky barriers on the helicity-dependent photoresponse of 2D phototransistors

Quereda, J., Hidding, J., Ghiasi, T. S., Wees, B. J. V., Wal, C. H. V. D. & Guimaraes, M. H. D., 8-jan.-2021, In: Npj 2d materials and applications. 5, 1, 7 blz., 13.

Onderzoeksoutput › › peer review

Characterization of low-resistance ohmic contacts to a two-dimensional electron gas in a GaAs/AlGaAs heterostructure

Javaid Iqbal, M., Reuter, D., Wieck, A. D. & Van Der Wal, C., 1-feb.-2020, In: EPJ Applied Physics. 89, 2, 8 blz., 20101.

Onderzoeksoutput › › peer review

Detecting Chirality in Two-Terminal Electronic Nanodevices

Yang, X., van der Wal, C. H. & van Wees, B. J., 12-aug.-2020, In: Nano Letters. 20, 8, blz. 6148-6154 7 blz.

Onderzoeksoutput › › peer review

Reply to "Comment on 'Spin-dependent electron transmission model for chiral molecules in mesoscopic devices'"

Yang, X., van der Wal, C. H. & van Wees, B. J., 17-jan.-2020, In: Physical Review B. 101, 2, 3 blz., 026404.

Onderzoeksoutput: Editorial › › peer review

Alle (59) publicaties

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