T.S. Ghiasi, MSc

Research

Research units:

Postal address:
Nijenborgh
4
Groningen
Netherlands
Phone: +31 50 363 4974Fax: +31 50 363 3900
Publications
  1. Semiconductor channel-mediated photodoping in h-BN encapsulated monolayer MoSe2 phototransistors

    Quereda Bernabeu, J., Ghiasi, T. S., van der Wal, C. H. & van Wees, B. J., Apr-2019, In : 2D Materials. 6, 2, 7 p., 025040.

    Research output: Contribution to journalArticleAcademicpeer-review

  2. Schakelen met elektronspin dankzij tweedimensionale materialen

    Ghiasi, T. S. & van Wees, B., Sep-2018, In : Nederlands Tijdschrift voor Natuurkunde. 84, 8, p. 14-18 5 p., 8.

    Research output: Contribution to journalArticlePopular

  3. Bilayer h-BN barriers for tunneling contacts in fully-encapsulated monolayer MoSe2 field-effect transistors

    Ghiasi, T. S., Quereda, J. & van Wees, B. J., 5-Oct-2018, In : 2D Materials. 6, 1, 9 p.

    Research output: Contribution to journalArticleAcademicpeer-review

  4. Large Proximity-Induced Spin Lifetime Anisotropy in Transition-Metal Dichalcogenide/Graphene Heterostructures

    Ghiasi, T. S., Ingla Aynés, J., Kaverzin, A. & van Wees, B., 27-Nov-2017, In : Nano Letters. 17, 12, p. 7528–7532 4 p.

    Research output: Contribution to journalArticleAcademicpeer-review

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