Graphene is a promising material for spintronics and related applications, such as the realization of spin transistors or spin qubits, owing to the low intrinsic spin orbit interaction, as well as the low hyperfine interaction of the electron spins with the carbon nuclei, which leads to a prediction of high spin coherence times.
Although the measured spin-relaxation times are still one order of magnitude lower than spins in 2D electron gas in semiconductor heterostructures, it is expected that by improving the sample fabrication methods or lowering the dimensionality of the devices, graphene can pair with or even exceed the spin-relaxation times for it's competitors.
In 2007 we published our first measurements of spin transport in single layer graphene where we measured spin relaxation length of ~2 µm at room temperature and 4.2 K (N. Tombros et al., Nature, 448, 571-574 (2007)).
A more detailed study including the description of the measurements of anisotropic spin relaxation in graphene was published a year later (N. Tombros et al., Phys. Rev. Lett., 101, 046601 (2008)).
Further studies showed the dependency of spin injection and spin transport on an electrical DC field. The DC field can enhance and decrease the efficiency of spin injection (C. Józsa et al., Phys. Rev. B, 79, 081402 (2009)) and influence the spin signal by improving or reducing the spin diffusion (C. Józsa et al., Phys. Rev. Lett.,100, 236603 (2008)).
|Last modified:||09 July 2015 10.59 a.m.|