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Lecture Arindam Ghosh


24 July 2012 FWN-Building 5114.0004, Nijenborgh 4, 9747 AG, Groningen
Speaker: Prof. Dr. Arindam Ghosh
Affiliation: Department of Physics, Indian Institute of Science, Bangalore, Inda
Title: Origin of flicker noise in ultra-fast nanoelectronics
Date: Tue Jul 24, 2012
Start: 11.00
Location: FWN-Building 5114.0004
Host: B.J. van Wees
Telephone: +31 50 363 4974


Flicker noise in electrical transport is ubiquitous and generally a nuisance in the operation of a field-effect device. This noise, also known as the '1/f noise', manifests in slow fluctuations in the drain-source current due to the fluctuations in the channel conductivity. The flicker noise often sets the limit of performance in both active and passive electronic components, but if appropriately analyzed, it can also provide information that cannot be gleaned from standard time-averaged current-voltage measurements.   In this talk I shall discuss the microscopic origin of flicker noise in atomically-flat two-dimensional semiconductors, in particular, graphene-based field effect devices on insulating substrates. I shall demonstrate how noise experiments in such systems can act as a versatile probe to several electronic and thermodynamic properties which, in principle, can be exploited in other fields too The first part of the presentation will explore the effect of band structure, dispersion relation and other factors on flicker noise in various forms of graphene devices. The latter part will present the results of noise measurements in emerging classes of ultra-thin conductors, such as molybdenum di-sulphide and delta-doped silicon, and we will attempt to construct a generalized platform from which the microscopic mechanism of flicker noise in these materials can be understood.

Last modified:22 October 2012 2.30 p.m.