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Lecture Shimpei Ono


05 March 2010 FWN-Building 5118.-149, Nijenborgh 4, 9747 AG, Groningen
Speaker: Dr. Shimpei Ono
Affiliation: Central Research Instittue of Electric Power Industry (Tokyo, Japan) and University of Geneva, Switzerland
Title: High-density carrier doping by electrolyte; Application to organic FETs
Date: Fri Mar 5, 2010
Start: 11.30
Location: FWN-Building 5118.-149
Host: T.T.M. Palstra
Telephone: +31 50 363 4440


There has been significant interest to develop new kinds of organic transistors such as those using electric double layers (EDLs) of electrolytes. It is reported that the EDLs gating can be a promising technology not only to realize high performance organic field-effect transistors (OFETs), but also to drive phase transitions in strongly correlated electron systems to a metal or a superconductor. However, there is no detailed study of microscopic mechanisms of the charge transport in the vicinity of the solid/liquid interfaces. In this talk, we report the two-dimensional charge transport at the interface with the use of various ionic liquids as the electrolyte layer in OFETs. Since the use of ionic liquid electrolytes in OFETs enables high-density carrier doping with minimum gate voltages without scarifying the carrier mobility, higher performances are likely to emerge by elaborate search for compounds incorporated in OFETs.

By optimizing the gating ionic liquid, the highest mobility of the electrolyte-gated OFETs elevated up to 12.6 cm2/Vs, which is only a fraction of the value of intrinsic material property, demonstrating an excellent field-effect switching operation.


Last modified:22 October 2012 2.30 p.m.