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Lecture Sven Rogge


12 March 2008 FWN-Building 5113.0202, Nijenborgh 4, 9747 AG, Groningen
Speaker: Dr. Sven Rogge
Affiliation: Kavli Institute of NanoScience, Delft University of Technology
Title: Addressing charge and spin degrees of freedom of a single dopant atom
Date: Wed Mar 12, 2008
Start: 15.00
Location: FWN-Building 5113.0202
Host: Caspar van der Wal
Telephone: +31 50 363 4555


Current semiconductor devices have been scaled to such small dimensions that we need to take their atomistic nature into account to understand their operation. At the same time these ultra-small devices also bring new opportunities such as electrical access to a single dopant. This seminar focusses on the physics of transport through a single n-type dopant in a semiconductor and the gate control of its wavefunction. Understanding and controlling a dopants wavefunction in a nanostructure is a key ingredient for Si quantum electronics. In our experimental system we are sensitive to a single As donor incorporated in the channel of a Si triple-gate transistor and we are able to measure the level spectrum and charging energy by means of transport spectroscopy. The measured level spectrum can be divided into levels associated with the donor potential, a triangular well at the interface, and hybridized combinations of those two. The assignment is based on atomistic modeling of the dopant close to the interface in a tight binding approach. Besides the gate control of the orbital degree of freedom of the dopant, data that link to the spin degree of freedom by the Kondo effect will be discussed.

Last modified:22 October 2012 2.30 p.m.