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Lecture Precious Shamba


10 October 2007 FWN-Building 5118.-156, Nijenborgh 4, 9747 AG, Groningen
Speaker: Precious Shamba
Affiliation: Nelson Mandela Metropolitan University, Port Elizabeth, South Africa
Title: Electrical characterization of Sn doped InAs grown using metalorganic vapour phase epitaxy
Date: Wed Oct 10, 2007
Start: 11.00
Location: FWN-Building 5118.-156
Host: Petra Rudolf
Telephone: +31 50 363 4736


P. Shamba , L. Botha, T. Krug, A. Venter and J.R. Botha

Keywords: InAs, MOVPE, doping, mobility


InAs is a direct, narrow bandgap semiconductor which has become one of the most attractive materials for applications in high speed devices [1]. In this study, InAs epitaxial layers were grown on semi-insulating GaAs using atmospheric pressure metalorganic vapour phase epitaxy (MOVPE). TBAs and AsH3 were used as the group V precursors whilst TMI was used as the group III source. The electrical properties and surface morphologies of undoped InAs layers grown with TBAs and AsH3 are compared for growth temperatures between 550ºC to 650ºC. The incorporation efficiency of Sn in MOVPE-grown InAs (using tetraethyltin as a source) has also been investigated for the first time. The incorporation efficiency is extensively studied as a function of V/III ratio, growth temperature and substrate orientation. The effect of these parameters on the surface morphology is also reported.



  1. A. Y. Chao and H. C. Casey, (1974) Appl. Phys. Lett.   25, 288
Last modified:22 October 2012 2.30 p.m.