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Lecture Yongfeng Mei


08 May 2007 FWN-Building 5118.-157, Nijenborgh 4, 9747 AG, Groningen
Speaker:Dr. Yongfeng Mei
Affiliation:Institute for integrative Nanosciences, IFW Dresden, Germany
Title:Wrinkled semiconductors layers: from principle to application
Date:Tue May 8, 2007
Location:FWN-Building 5118.-157
Host:Patrick Onck
Telephone:+31 50 363 8039


Recently, wrinkling of a semiconductor layer is attracting much interest in rolled-up nanotechnology, stretchable electronics, and thin membrane transfer. Here, we present a deterministic layer wrinkling method to fabricate ordered nanochannel networks on semiconductor substrates. The method, termed Release and bond-back of layers (REBOLA), consists of the partial release, wrinkling and bond back of a compressively strained functional layer on a Si-on-insulator substrate surface, which seems compatible with main stream Si technology. The layer deformation after deterministic wrinkling and bond-back is reflected by the band-edge shifts of an embedded quantum well structure, which we can describe by theory. To elucidate the usefulness of REBOLA, we demonstrate nanofluidic transport as well as femto-litre filling and emptying of individual wrinkles on a standard semiconductor substrate. Some interesting phenomena related to wrinkling (like self-similar folding and interference-enhanced emission) will also be addressed.
Last modified:22 October 2012 2.30 p.m.