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Lecture F. Jedema


15 August 2005 FWN-Building 5113.0201, Nijenborgh 4, 9747 AG, Groningen
Speaker:Dr. F. Jedema
Affiliation:Philips Research Laboratories, Eindhoven
Title:Phase change random access memory
Date:Mon Aug 15, 2005
Location:FWN-Building 5113.0201
Host:B.J. van Wees
Telephone:+31 50 363 4933


A promising candidate for a scalable Non-Volatile Memory is Phase Change Random Access Memory (PCRAM). At Philips we have demonstrated the feasibility of a novel PCRAM memory cell concept based on a narrow line of a doped-SbTe phase-change material [1]. Demonstrator cells can be reversibly reprogrammed between two well-defined resistance levels on a timescale of nanoseconds. The phase change memory concept relies on the ability to switch a cell between two states by inducing a change-of-state in the material. During a programming cycle the phase-change material in the memory cell can be transferred from its amorphous to a crystalline state or vice versa, resulting in a high and low resistance state in the memory cell. In this talk, I will discuss the line cell PCRAM concept. 1. M. Lankhorst, W. Ketelaars, R. Wolters, Low-cost and nanoscale non-volatile memory concept for future silicon chips, Nature Materials 4, 347-352 (2005).
Last modified:22 October 2012 2.30 p.m.