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Lecture M.C.M. van de Sanden


14 January 2005 FWN-Building 5113.0202, Nijenborgh 4, 9747 AG, Groningen
Speaker: Prof. Dr. M.C.M. van de Sanden
Affiliation: Department of Applied Physics, Eindhoven University of Technology
Title: The growth of thin amorphous films from reactive gas phase species: In situ studies to unravel the growth mechanism
Date: Fri Jan 14, 2005
Start: 11.00
Location: FWN-Building 5113.0202
Host: G. Palasantzas
Telephone: +31 50 363 4272


The growth of thin amorphous films from reactive species such as generated during plasma enhanced or hot filament chemical vapour deposition is a widely applied technology, e.g., in the production of thin film solar cells. Key to these deposition methods is that the dissociation of the precursor gases is performed in the gas phase, enabling low substrate temperature. In this respect the film properties depend on both the properties of the reactive species as well as on the chemical and physical state of the surface of the growing film. In this talk we will present novel in situ, mostly all optical methods, surface diagnostics to unravel the thin film growth mechanism. The diagnostics will be demonstrated for the particular case of the growth of hydrogenated amorphous silicon which serves as a model system. We will show recent results on the reaction probability of some silane radicals as determined from time resolved cavity ring down spectroscopy, the detection of surface hydrogen and dangling bonds by means of (near) infrared absorption, evanescent wave cavity ring down spectroscopy and second harmonic generation. Real time spectroscopic ellipsometry in combination with an optical model of the film growth reveals insight in the surface diffusion mechanism.
Last modified:22 October 2012 2.31 p.m.