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Lecture E.P.A.M. (Erik) Bakkers


28 April 2004 FWN-Building 5113.0202, Nijenborgh 4, 9747 AG, Groningen
Speaker: Dr. E.P.A.M. (Erik) Bakkers
Affiliation: Inorganic Materials and Processing, Philips Research Laboratories
Title: InP nanotubes and nanowires
Date: Wed Apr 28, 2004
Start: 14.00
Location: FWN-Building 5113.0202
Host: B.J. van Wees
Telephone: +31 50 363 4933


The electronic structure of semiconducting nanowires is determined by the chemical composition and the radial confinement governed by the diameter. The confinement effect in these one-dimensional structures could be enhanced by the formation of tubes instead of wires.

In this talk the synthesis of semiconducting (InP, InAs, GaAs) wires and tubes via the vapor-liquid-solid (VLS) growth mechanism will be discussed. These wires and nanotubes are crystalline and have the (bulk) zinc blende structure. Both (homo)epitaxial as well as heteroepitaxial growth of these nanowires was studied. In this way the growth direction can be controlled and, moreover, heteroepitaxial growth might open the way to integrate III-V materials with silicon.

The optical properties of the structures is studied by photoluminescence; a considerable blue-shift with respect to bulk emission was observed. In the second part the electrical measurements on individual nanowires will be discussed. At low temperatures a coulomb blockade was observed and discrete energy levels in the wires were revealed.

Last modified:22 October 2012 2.30 p.m.