Lecture E.P.A.M. (Erik) Bakkers
|28 April 2004||FWN-Building 5113.0202, Nijenborgh 4, 9747 AG, Groningen|
|Speaker:||Dr. E.P.A.M. (Erik) Bakkers|
|Affiliation:||Inorganic Materials and Processing, Philips Research Laboratories|
|Title:||InP nanotubes and nanowires|
|Date:||Wed Apr 28, 2004|
|Host:||B.J. van Wees|
|Telephone:||+31 50 363 4933|
The electronic structure of semiconducting nanowires is determined by the chemical composition and the radial confinement governed by the diameter. The confinement effect in these one-dimensional structures could be enhanced by the formation of tubes instead of wires.
In this talk the synthesis of semiconducting (InP, InAs, GaAs) wires and tubes via the vapor-liquid-solid (VLS) growth mechanism will be discussed. These wires and nanotubes are crystalline and have the (bulk) zinc blende structure. Both (homo)epitaxial as well as heteroepitaxial growth of these nanowires was studied. In this way the growth direction can be controlled and, moreover, heteroepitaxial growth might open the way to integrate III-V materials with silicon.
The optical properties of the structures is studied by photoluminescence; a considerable blue-shift with respect to bulk emission was observed. In the second part the electrical measurements on individual nanowires will be discussed. At low temperatures a coulomb blockade was observed and discrete energy levels in the wires were revealed.
|Last modified:||22 October 2012 2.30 p.m.|