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Lecture Clément Faugeras


09 January 2004 FWN-Building 5116.0116, Nijenborgh 4, 9747 AG, Groningen
Speaker:Clément Faugeras
Affiliation:Laboratoire des Champs Magnétiques Intenses, Grenoble, France
Title:Electron-phonon interaction in a high-density GaAs quantum well
Date:Fri Jan 9, 2004
Location:FWN-Building 5116.0116
Host:Paul van Loosdrecht
Telephone:+31 50 363 8149 / 4974 (secr.)


In polar semiconductors, the longitudinal optical phonon produces a macroscopic electric field which couples to the electron motion giving rise to the resonant magneto-polaron effect. This effect is one of the most spectacular manifestation of the electron-phonon interaction in polar semiconductors and should give rise to an anti-crossing behaviour between the Landau levels. On the experimental point of view, results are often obscured by the reststrahlen band of the substrate and it is difficult to observe clearly this interaction. We have been able to overcome this problem by lifting off the quantum structure from its original GaAs substrate and by bonding it to a silicon substrate which is transparent in the infrared range of energy. These lift-off samples allow us to measure in an absolute way and for the first time the infrared transmission in the optical phonon range of energy. I will present far infrared transmission experiments on a series of high density and high mobility single GaAs quantum wells obtained in perpendicular and in tilted configuration. The results will be interpreted in the dielectric function framework.

Last modified:22 October 2012 2.30 p.m.