Lecture Antoine Kahn
|24 October 2003||FWN-Building 5113.0201, Nijenborgh 4, 9747 AG, Groningen|
|Affiliation:||Department of Eelectrical Engineering, Princeton University, Princeton, NJ 08544, USA|
|Title:||Electronic properties of and energy barrier formation at metal/organic and organic/organic interfaces of pi-conjugated molecular films|
|Date:||Fri Oct 24, 2003|
|Telephone:||+31 50-3634736 / 4974 (secr.)|
The development of organic molecular devices for opto- and microelectronics has been exceedingly rapid over the past ten years. Metal-organic contacts and organic-organic heterojunctions play key roles in the operation of these devices. Efficient injection of charge carriers across interfaces requires good control of interface chemical and electronic properties. Yet these properties are difficult to determine and optimize via standard transport methods because of the complex, and sometime unknown, bulk transport characteristics in these molecular materials. Measurements of interface energetics and chemical structure via ultra-violet, X-ray and inverse photoemission spectroscopy, coupled with in-situ transport measurements, are crucial for a fundamental understanding of these interfaces. This talk summarizes recent ultra-high vacuum-based investigations of interfaces between metals and thin films (monolayer to ~ 1500Å) of pi-conjugated molecules (e.g. Alq3, F16CuPc, ZnPc, α-NPD) of interest for transport and light emitting devices. Emphasis is placed on the mechanisms that control metal/organic interface barriers: interface bonding, chemistry and interface-induced gap states. Molecular level alignment at organic/organic heterojunctions is also reviewed in light of very recent work involving p-type electrical doping of hole-transport layers.
|Last modified:||22 October 2012 2.31 p.m.|