Physics: Prof. dr. R. van de Sanden, Eindhoven University of Technology: Plasma-surface interaction during the growth of silicon thin films: In situ plasma and surface studies
|14 May 2009||FWN-Building 5111.0080, Nijenborgh 4, 9747 AG, Groningen|
|Speaker:||Physics: Prof. dr. R. van de Sanden|
|Affiliation:||Eindhoven University of Technology|
|Title:||Plasma-surface interaction during the growth of silicon thin films: In situ plasma and surface studies|
AbstractPlasmas, a complex non-equilibrium medium which contains apart from neutral particles, free electrons, (molecular) ions, radicals and excited atoms and molecules, are widely used for materials processing. Well known examples are anisotropic etching of semiconductors and deposition of thin films for solar cells and flat panel displays. Understanding and control of the complexity of plasmas and plasma-surface interaction is key to further exploit the unique plasma processing properties. In this talk I will review our approach to apply in situ diagnostics during plasma processing of materials to get insight in the complex processes taking place. The insights and understanding of these studies are used to control the complexity by tailoring and monitoring the plasma properties.
|Last modified:||12 September 2014 11.21 a.m.|