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OnderzoekVan Swinderen Institute

Physics: Prof. dr. R. van de Sanden, Eindhoven Univ. of Technology: Plasma-surface interaction during the growth of silicon thin films: In situ plasma and surface studies


22 January 2009 FWN-Building 5111.0080, Nijenborgh 4, 9747 AG, Groningen
Speaker: Physics: Prof. dr. R. van de Sanden
Affiliation: Eindhoven Univ. of Technology
Title: Plasma-surface interaction during the growth of silicon thin films: In situ plasma and surface studies
Date: 22-01-2009
Start: 16.00
Location: FWN-Building 5111.0080


Plasmas, a complex non-equilibrium medium which contains apart from neutral particles, free electrons, (molecular) ions, radicals and excited atoms and molecules, are widely used for materials processing. Well known examples are anisotropic etching of semiconductors and deposition of thin films for solar cells and flat panel displays. Understanding and control of the complexity of plasmas and plasma-surface interaction is key to further exploit the unique plasma processing properties. In this talk I will review our approach to apply in situ diagnostics during plasma processing of materials to get insight in the complex processes taking place. The insights and understanding of these studies are used to control the complexity by tailoring and monitoring the plasma properties.

            In a first example I will discuss the use of time dependent optical emission spectroscopy to monitor silane gas consumption during the high pressure high depletion deposition of microcrystalline silicon using highly diluted silane in hydrogen. By carefully analyzing the time dependence of the deposition process by monitoring the SiH radical emission, we established that the poor performance of solar cells produced under pure silane deposition conditions is due to the lack of control of the initial phase of growth [1,2]. As a second example three photon-in-photon-out techniques, attenuated total internal reflection infrared aborption spectroscopy, spectroscopic ellipsometry and second harmonic generation to detect the initial growth of a-Si:H on high quality c-Si surfaces [3]. Finally as a third example we will discuss the ultra-sensitive evanescent wave cavity ring down spectroscopy to study the kinetics involved during the growth of a-Si:H from a SiH4 radical source [4]. The question whether the dangling bond is essential during a-Si:H growth from a radical source will be addressed.


[1] M.N. van den Donker et al., Appl. Phys. Lett. 87, 263503 (2005).

[2] G. Dingemans et al., Appl. Phys. Lett. 91, 161902 (2007).

[3] J.J.H. Gielis et al., Phys. Rev. B 77 205329 (2008).

[4] I.M.P. Aarts et al., Appl. Phys. Lett. 90, 161918 (2007).


Last modified:12 September 2014 11.21 a.m.