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Voltage- and temperature-dependent rare-earth dopant contribution to the interfacial magnetic anisotropy

Leon, A. O. & Bauer, G. E. W., 23-Sep-2020, In : Journal of Physics-Condensed Matter. 32, 40, 8 p., 404004.

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  • Voltage- and temperature-dependent rare-earth dopant contribution to the interfacial magnetic anisotropy

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DOI

The control of magnetic materials and devices by voltages without electric currents holds the promise of power-saving nano-scale devices. Here we study the temperature-dependent voltage control of the magnetic anisotropy caused by rare-earth (RE) local moments at an interface between a magnetic metal and a non-magnetic insulator, such as Co|(RE)|MgO. Based on a Stevens operator representation of crystal and applied field effects, we find large dominantly quadrupolar intrinsic and field-induced interface anisotropies at room temperature. We suggest improved functionalities of transition metal tunnel junctions by dusting their interfaces with rare earths.

Original languageEnglish
Article number404004
Number of pages8
JournalJournal of Physics-Condensed Matter
Volume32
Issue number40
Publication statusPublished - 23-Sep-2020

    Keywords

  • voltage, rare-earth anisotropy, voltage-controlled magnetic anisotropy, SPIN, ENERGY

ID: 132897110