Two-Terminal Molecular Memory through Reversible Switching of Quantum Interference Features in Tunneling JunctionsCarlotti, M., Soni, S., Kumar, S., Ai, Y., Sauter, E., Zharnikov, M. & Chiechi, R. C., 26-Nov-2018, In : Angewandte Chemie International Edition. 57, 48, p. 15681-15685 5 p.
Research output: Contribution to journal › Article › Academic › peer-review
Large-area molecular tunneling junctions comprising self-assembled monolayers of redox-active molecules are described that exhibit two-terminal bias switching. The as-prepared monolayers undergo partial charge transfer to the underlying metal substrate (Au, Pt, or Ag), which converts their cores from a quinoid to a hydroquinoid form. The resulting rearoniatization converts the bond topology from a cross-conjugated to a linearly conjugated pi system. The cross-conjugated from correlates to the appearance of an interference feature in the transmission spectrum that vanishes for the linearly conjugated form. Owing to the presence of electron-withdrawing nitrile groups, the reduction potential and the interference feature lie close to the work function and Fermi level of the metallic substrate. We exploited the relationship between conjugation patterns and quantum interference to create nonvolatile memory in prow-devices using eutectic Gain as the top contact.
|Number of pages||5|
|Journal||Angewandte Chemie International Edition|
|Early online date||27-Sep-2018|
|Publication status||Published - 26-Nov-2018|
- eutectic gallium-indium, memory, molecular electronics, quantum interference, switching, SELF-ASSEMBLED MONOLAYERS, GALLIUM-INDIUM EGAIN, CROSS-CONJUGATION, LIQUID-METAL, CONDUCTANCE, TRANSPORT, COMPLEX, TRANSISTORS, RESISTANCE