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Two-Terminal Molecular Memory through Reversible Switching of Quantum Interference Features in Tunneling Junctions

Carlotti, M., Soni, S., Kumar, S., Ai, Y., Sauter, E., Zharnikov, M. & Chiechi, R. C., 26-Nov-2018, In : Angewandte Chemie International Edition. 57, 48, p. 15681-15685 5 p.

Research output: Contribution to journalArticleAcademicpeer-review

Large-area molecular tunneling junctions comprising self-assembled monolayers of redox-active molecules are described that exhibit two-terminal bias switching. The as-prepared monolayers undergo partial charge transfer to the underlying metal substrate (Au, Pt, or Ag), which converts their cores from a quinoid to a hydroquinoid form. The resulting rearoniatization converts the bond topology from a cross-conjugated to a linearly conjugated pi system. The cross-conjugated from correlates to the appearance of an interference feature in the transmission spectrum that vanishes for the linearly conjugated form. Owing to the presence of electron-withdrawing nitrile groups, the reduction potential and the interference feature lie close to the work function and Fermi level of the metallic substrate. We exploited the relationship between conjugation patterns and quantum interference to create nonvolatile memory in prow-devices using eutectic Gain as the top contact.

Original languageEnglish
Pages (from-to)15681-15685
Number of pages5
JournalAngewandte Chemie International Edition
Volume57
Issue number48
Early online date27-Sep-2018
Publication statusPublished - 26-Nov-2018

    Keywords

  • eutectic gallium-indium, memory, molecular electronics, quantum interference, switching, SELF-ASSEMBLED MONOLAYERS, GALLIUM-INDIUM EGAIN, CROSS-CONJUGATION, LIQUID-METAL, CONDUCTANCE, TRANSPORT, COMPLEX, TRANSISTORS, RESISTANCE

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