Publication

Suppressed spin dephasing for two-dimensional and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms

Denega, S. Z., Last, T., Liu, J., Slachter, A., Rizo, P. J., Loosdrecht, P. H. M. V., Wees, B. J. V., Reuter, D., Wieck, A. D. & Wal, C. H. V. D., 12-Apr-2010, In : Physical Review. B: Condensed Matter and Materials Physics. 81, 15, p. 11-15 4 p., 153302.

Research output: Contribution to journalArticleAcademicpeer-review

APA

Denega, S. Z., Last, T., Liu, J., Slachter, A., Rizo, P. J., Loosdrecht, P. H. M. V., ... Wal, C. H. V. D. (2010). Suppressed spin dephasing for two-dimensional and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms. Physical Review. B: Condensed Matter and Materials Physics, 81(15), 11-15. [153302]. https://doi.org/10.1103/PhysRevB.81.153302

Author

Denega, S.Z. ; Last, Thorsten ; Liu, J. ; Slachter, A. ; Rizo, P.J. ; Loosdrecht, P.H.M. van ; Wees, B.J. van ; Reuter, D. ; Wieck, A.D. ; Wal, C.H. van der. / Suppressed spin dephasing for two-dimensional and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms. In: Physical Review. B: Condensed Matter and Materials Physics. 2010 ; Vol. 81, No. 15. pp. 11-15.

Harvard

Denega, SZ, Last, T, Liu, J, Slachter, A, Rizo, PJ, Loosdrecht, PHMV, Wees, BJV, Reuter, D, Wieck, AD & Wal, CHVD 2010, 'Suppressed spin dephasing for two-dimensional and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms', Physical Review. B: Condensed Matter and Materials Physics, vol. 81, no. 15, 153302, pp. 11-15. https://doi.org/10.1103/PhysRevB.81.153302

Standard

Suppressed spin dephasing for two-dimensional and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms. / Denega, S.Z.; Last, Thorsten; Liu, J.; Slachter, A.; Rizo, P.J.; Loosdrecht, P.H.M. van; Wees, B.J. van; Reuter, D.; Wieck, A.D.; Wal, C.H. van der.

In: Physical Review. B: Condensed Matter and Materials Physics, Vol. 81, No. 15, 153302, 12.04.2010, p. 11-15.

Research output: Contribution to journalArticleAcademicpeer-review

Vancouver

Denega SZ, Last T, Liu J, Slachter A, Rizo PJ, Loosdrecht PHMV et al. Suppressed spin dephasing for two-dimensional and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms. Physical Review. B: Condensed Matter and Materials Physics. 2010 Apr 12;81(15):11-15. 153302. https://doi.org/10.1103/PhysRevB.81.153302


BibTeX

@article{b7d314d5b0674f20bfbc33c8bde84319,
title = "Suppressed spin dephasing for two-dimensional and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms",
abstract = "We report a study of suppressed spin dephasing for quasi-one-dimensional electron ensembles in wires etched into a GaAs/AlGaAs heterojunction system. Time-resolved Kerr-rotation measurements show a suppression that is most pronounced for wires along the [110] crystal direction. This is the fingerprint of a suppression that is enhanced due to a strong anisotropy in spin-orbit fields that can occur when the Rashba and Dresselhaus contributions are engineered to cancel each other. A surprising observation is that this mechanism for suppressing spin dephasing is not only effective for electrons in the heterojunction quantum well but also for electrons in a deeper bulk layer.",
keywords = "QUANTUM-WELLS, POLARIZATION, ANISOTROPY",
author = "S.Z. Denega and Thorsten Last and J. Liu and A. Slachter and P.J. Rizo and Loosdrecht, {P.H.M. van} and Wees, {B.J. van} and D. Reuter and A.D. Wieck and Wal, {C.H. van der}",
note = "Relation: https://www.rug.nl/zernike/ Rights: University of Groningen, Zernike Institute for Advanced Materials",
year = "2010",
month = "4",
day = "12",
doi = "10.1103/PhysRevB.81.153302",
language = "English",
volume = "81",
pages = "11--15",
journal = "Physical Review. B: Condensed Matter and Materials Physics",
issn = "0163-1829",
publisher = "AMER PHYSICAL SOC",
number = "15",

}

RIS

TY - JOUR

T1 - Suppressed spin dephasing for two-dimensional and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms

AU - Denega, S.Z.

AU - Last, Thorsten

AU - Liu, J.

AU - Slachter, A.

AU - Rizo, P.J.

AU - Loosdrecht, P.H.M. van

AU - Wees, B.J. van

AU - Reuter, D.

AU - Wieck, A.D.

AU - Wal, C.H. van der

N1 - Relation: https://www.rug.nl/zernike/ Rights: University of Groningen, Zernike Institute for Advanced Materials

PY - 2010/4/12

Y1 - 2010/4/12

N2 - We report a study of suppressed spin dephasing for quasi-one-dimensional electron ensembles in wires etched into a GaAs/AlGaAs heterojunction system. Time-resolved Kerr-rotation measurements show a suppression that is most pronounced for wires along the [110] crystal direction. This is the fingerprint of a suppression that is enhanced due to a strong anisotropy in spin-orbit fields that can occur when the Rashba and Dresselhaus contributions are engineered to cancel each other. A surprising observation is that this mechanism for suppressing spin dephasing is not only effective for electrons in the heterojunction quantum well but also for electrons in a deeper bulk layer.

AB - We report a study of suppressed spin dephasing for quasi-one-dimensional electron ensembles in wires etched into a GaAs/AlGaAs heterojunction system. Time-resolved Kerr-rotation measurements show a suppression that is most pronounced for wires along the [110] crystal direction. This is the fingerprint of a suppression that is enhanced due to a strong anisotropy in spin-orbit fields that can occur when the Rashba and Dresselhaus contributions are engineered to cancel each other. A surprising observation is that this mechanism for suppressing spin dephasing is not only effective for electrons in the heterojunction quantum well but also for electrons in a deeper bulk layer.

KW - QUANTUM-WELLS

KW - POLARIZATION

KW - ANISOTROPY

U2 - 10.1103/PhysRevB.81.153302

DO - 10.1103/PhysRevB.81.153302

M3 - Article

VL - 81

SP - 11

EP - 15

JO - Physical Review. B: Condensed Matter and Materials Physics

JF - Physical Review. B: Condensed Matter and Materials Physics

SN - 0163-1829

IS - 15

M1 - 153302

ER -

ID: 5080080