Publication

Stabilization of phase-pure rhombohedral HfZrO4 in pulsed laser deposited thin films

Begon-Lours, L., Mulder, M., Nukala, P., de Graaf, S., Birkholzer, Y. A., Kooi, B., Noheda, B., Koster, G. & Rijnders, G., 7-Apr-2020, In : Physical Review Materials. 4, 4, 6 p., 043401.

Research output: Contribution to journalArticleAcademicpeer-review

APA

Begon-Lours, L., Mulder, M., Nukala, P., de Graaf, S., Birkholzer, Y. A., Kooi, B., Noheda, B., Koster, G., & Rijnders, G. (2020). Stabilization of phase-pure rhombohedral HfZrO4 in pulsed laser deposited thin films. Physical Review Materials, 4(4), [043401]. https://doi.org/10.1103/PhysRevMaterials.4.043401

Author

Begon-Lours, Laura ; Mulder, Martijn ; Nukala, Pavan ; de Graaf, Sytze ; Birkholzer, Yorick A. ; Kooi, Bart ; Noheda, Beatriz ; Koster, Gertjan ; Rijnders, Guus. / Stabilization of phase-pure rhombohedral HfZrO4 in pulsed laser deposited thin films. In: Physical Review Materials. 2020 ; Vol. 4, No. 4.

Harvard

Begon-Lours, L, Mulder, M, Nukala, P, de Graaf, S, Birkholzer, YA, Kooi, B, Noheda, B, Koster, G & Rijnders, G 2020, 'Stabilization of phase-pure rhombohedral HfZrO4 in pulsed laser deposited thin films', Physical Review Materials, vol. 4, no. 4, 043401. https://doi.org/10.1103/PhysRevMaterials.4.043401

Standard

Stabilization of phase-pure rhombohedral HfZrO4 in pulsed laser deposited thin films. / Begon-Lours, Laura; Mulder, Martijn; Nukala, Pavan; de Graaf, Sytze; Birkholzer, Yorick A.; Kooi, Bart; Noheda, Beatriz; Koster, Gertjan; Rijnders, Guus.

In: Physical Review Materials, Vol. 4, No. 4, 043401, 07.04.2020.

Research output: Contribution to journalArticleAcademicpeer-review

Vancouver

Begon-Lours L, Mulder M, Nukala P, de Graaf S, Birkholzer YA, Kooi B et al. Stabilization of phase-pure rhombohedral HfZrO4 in pulsed laser deposited thin films. Physical Review Materials. 2020 Apr 7;4(4). 043401. https://doi.org/10.1103/PhysRevMaterials.4.043401


BibTeX

@article{d2c0e9040bde4ab4a3f36c78f98bcac1,
title = "Stabilization of phase-pure rhombohedral HfZrO4 in pulsed laser deposited thin films",
abstract = "Controlling the crystalline structure of hafnium zirconate and its epitaxial relationship to a semiconducting electrode has high technological interest, as ferroelectric materials are key ingredients for emerging electronic devices. Using pulsed laser deposition, a phase-pure, ultrathin film of HfZrO4 is grown epitaxially on a GaN(0001)/Si(111) template. Since standard microscopy techniques do not allow us to determine with certitude the crystalline structure of the film due to the weak scattering of oxygen, differentiated differential phase contrast scanning transmission electron microscopy is used to allow the direct imaging of oxygen columns in the film. Combined with x-ray diffraction analysis, the polar nature and rhombohedral R3 symmetry of the film are demonstrated.",
keywords = "FERROELECTRICITY, MODEL",
author = "Laura Begon-Lours and Martijn Mulder and Pavan Nukala and {de Graaf}, Sytze and Birkholzer, {Yorick A.} and Bart Kooi and Beatriz Noheda and Gertjan Koster and Guus Rijnders",
year = "2020",
month = apr,
day = "7",
doi = "10.1103/PhysRevMaterials.4.043401",
language = "English",
volume = "4",
journal = "Physical Review Materials",
issn = "2475-9953",
publisher = "AMER PHYSICAL SOC",
number = "4",

}

RIS

TY - JOUR

T1 - Stabilization of phase-pure rhombohedral HfZrO4 in pulsed laser deposited thin films

AU - Begon-Lours, Laura

AU - Mulder, Martijn

AU - Nukala, Pavan

AU - de Graaf, Sytze

AU - Birkholzer, Yorick A.

AU - Kooi, Bart

AU - Noheda, Beatriz

AU - Koster, Gertjan

AU - Rijnders, Guus

PY - 2020/4/7

Y1 - 2020/4/7

N2 - Controlling the crystalline structure of hafnium zirconate and its epitaxial relationship to a semiconducting electrode has high technological interest, as ferroelectric materials are key ingredients for emerging electronic devices. Using pulsed laser deposition, a phase-pure, ultrathin film of HfZrO4 is grown epitaxially on a GaN(0001)/Si(111) template. Since standard microscopy techniques do not allow us to determine with certitude the crystalline structure of the film due to the weak scattering of oxygen, differentiated differential phase contrast scanning transmission electron microscopy is used to allow the direct imaging of oxygen columns in the film. Combined with x-ray diffraction analysis, the polar nature and rhombohedral R3 symmetry of the film are demonstrated.

AB - Controlling the crystalline structure of hafnium zirconate and its epitaxial relationship to a semiconducting electrode has high technological interest, as ferroelectric materials are key ingredients for emerging electronic devices. Using pulsed laser deposition, a phase-pure, ultrathin film of HfZrO4 is grown epitaxially on a GaN(0001)/Si(111) template. Since standard microscopy techniques do not allow us to determine with certitude the crystalline structure of the film due to the weak scattering of oxygen, differentiated differential phase contrast scanning transmission electron microscopy is used to allow the direct imaging of oxygen columns in the film. Combined with x-ray diffraction analysis, the polar nature and rhombohedral R3 symmetry of the film are demonstrated.

KW - FERROELECTRICITY

KW - MODEL

U2 - 10.1103/PhysRevMaterials.4.043401

DO - 10.1103/PhysRevMaterials.4.043401

M3 - Article

VL - 4

JO - Physical Review Materials

JF - Physical Review Materials

SN - 2475-9953

IS - 4

M1 - 043401

ER -

ID: 123591061