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Stabilization of phase-pure rhombohedral HfZrO4 in pulsed laser deposited thin films

Begon-Lours, L., Mulder, M., Nukala, P., de Graaf, S., Birkholzer, Y. A., Kooi, B., Noheda, B., Koster, G. & Rijnders, G., 7-Apr-2020, In : Physical Review Materials. 4, 4, 6 p., 043401.

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  • Stabilization of phase-pure rhombohedral HfZrO4in pulsed laser deposited thin films

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DOI

Controlling the crystalline structure of hafnium zirconate and its epitaxial relationship to a semiconducting electrode has high technological interest, as ferroelectric materials are key ingredients for emerging electronic devices. Using pulsed laser deposition, a phase-pure, ultrathin film of HfZrO4 is grown epitaxially on a GaN(0001)/Si(111) template. Since standard microscopy techniques do not allow us to determine with certitude the crystalline structure of the film due to the weak scattering of oxygen, differentiated differential phase contrast scanning transmission electron microscopy is used to allow the direct imaging of oxygen columns in the film. Combined with x-ray diffraction analysis, the polar nature and rhombohedral R3 symmetry of the film are demonstrated.

Original languageEnglish
Article number043401
Number of pages6
JournalPhysical Review Materials
Volume4
Issue number4
Publication statusPublished - 7-Apr-2020

    Keywords

  • FERROELECTRICITY, MODEL

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