Publication

Spin transport and relaxation in graphene, functionalized-graphene & graphene-TMD heterostructures

Omar, S., 2018, [Groningen]: University of Groningen. 182 p.

Research output: ThesisThesis fully internal (DIV)Academic

APA

Omar, S. (2018). Spin transport and relaxation in graphene, functionalized-graphene & graphene-TMD heterostructures. [Groningen]: University of Groningen.

Author

Omar, Siddharta. / Spin transport and relaxation in graphene, functionalized-graphene & graphene-TMD heterostructures. [Groningen] : University of Groningen, 2018. 182 p.

Harvard

Omar, S 2018, 'Spin transport and relaxation in graphene, functionalized-graphene & graphene-TMD heterostructures', Doctor of Philosophy, University of Groningen, [Groningen].

Standard

Spin transport and relaxation in graphene, functionalized-graphene & graphene-TMD heterostructures. / Omar, Siddharta.

[Groningen] : University of Groningen, 2018. 182 p.

Research output: ThesisThesis fully internal (DIV)Academic

Vancouver

Omar S. Spin transport and relaxation in graphene, functionalized-graphene & graphene-TMD heterostructures. [Groningen]: University of Groningen, 2018. 182 p.


BibTeX

@phdthesis{7cce4e306816479ab09c27d1319e04bc,
title = "Spin transport and relaxation in graphene, functionalized-graphene & graphene-TMD heterostructures",
abstract = "Graphene is a one-atom-thick carbon material, known for its exceptional electronic properties, which can be utilized in the future electronics industry. Also, it has shown a great potential for carrying the spin-angular momentum of electron up to long distances, making it useful in the field of ‘spintronics’ where electron-spins serve as information carriers. In this thesis, I study two fundamental problems in graphene-based spintronic devices: first, which factors affect the spin-transport in graphene and second, how to control the spin-current in graphene. In order to address these issues, we perform spin-transport experiments in various device architectures. We find that magnetic impurities are detrimental to the spin-transport, which we confirm by measuring the spintronic properties of graphene, decorated with magnetic porphyrin molecules. Alternatively, we also perform spin-dependent noise measurements in graphene and find that the spin-noise magnitude is higher by three-to-four orders than the charge noise magnitude. We attribute this behaviour to impurities scattering the electron-spins more severely than electronic-charge. In order to control the spin-current in graphene, we combine graphene with another 2D-material, tungsten disulfide (WS2), and fabricate graphene-WS2 heterostructures. We find that spin-transport is greatly suppressed in graphene which is in contact with WS2 due to the enhancement of spin-orbit coupling in graphene. This property can also be controlled via external electric-field. The obtained results can be utilized to improve the performance of future graphene-based spintronic-devices and to demonstrate the first graphene-based spin-transistor.",
author = "Siddharta Omar",
year = "2018",
language = "English",
isbn = "978-94-034-0501-8",
publisher = "University of Groningen",
school = "University of Groningen",

}

RIS

TY - THES

T1 - Spin transport and relaxation in graphene, functionalized-graphene & graphene-TMD heterostructures

AU - Omar, Siddharta

PY - 2018

Y1 - 2018

N2 - Graphene is a one-atom-thick carbon material, known for its exceptional electronic properties, which can be utilized in the future electronics industry. Also, it has shown a great potential for carrying the spin-angular momentum of electron up to long distances, making it useful in the field of ‘spintronics’ where electron-spins serve as information carriers. In this thesis, I study two fundamental problems in graphene-based spintronic devices: first, which factors affect the spin-transport in graphene and second, how to control the spin-current in graphene. In order to address these issues, we perform spin-transport experiments in various device architectures. We find that magnetic impurities are detrimental to the spin-transport, which we confirm by measuring the spintronic properties of graphene, decorated with magnetic porphyrin molecules. Alternatively, we also perform spin-dependent noise measurements in graphene and find that the spin-noise magnitude is higher by three-to-four orders than the charge noise magnitude. We attribute this behaviour to impurities scattering the electron-spins more severely than electronic-charge. In order to control the spin-current in graphene, we combine graphene with another 2D-material, tungsten disulfide (WS2), and fabricate graphene-WS2 heterostructures. We find that spin-transport is greatly suppressed in graphene which is in contact with WS2 due to the enhancement of spin-orbit coupling in graphene. This property can also be controlled via external electric-field. The obtained results can be utilized to improve the performance of future graphene-based spintronic-devices and to demonstrate the first graphene-based spin-transistor.

AB - Graphene is a one-atom-thick carbon material, known for its exceptional electronic properties, which can be utilized in the future electronics industry. Also, it has shown a great potential for carrying the spin-angular momentum of electron up to long distances, making it useful in the field of ‘spintronics’ where electron-spins serve as information carriers. In this thesis, I study two fundamental problems in graphene-based spintronic devices: first, which factors affect the spin-transport in graphene and second, how to control the spin-current in graphene. In order to address these issues, we perform spin-transport experiments in various device architectures. We find that magnetic impurities are detrimental to the spin-transport, which we confirm by measuring the spintronic properties of graphene, decorated with magnetic porphyrin molecules. Alternatively, we also perform spin-dependent noise measurements in graphene and find that the spin-noise magnitude is higher by three-to-four orders than the charge noise magnitude. We attribute this behaviour to impurities scattering the electron-spins more severely than electronic-charge. In order to control the spin-current in graphene, we combine graphene with another 2D-material, tungsten disulfide (WS2), and fabricate graphene-WS2 heterostructures. We find that spin-transport is greatly suppressed in graphene which is in contact with WS2 due to the enhancement of spin-orbit coupling in graphene. This property can also be controlled via external electric-field. The obtained results can be utilized to improve the performance of future graphene-based spintronic-devices and to demonstrate the first graphene-based spin-transistor.

M3 - Thesis fully internal (DIV)

SN - 978-94-034-0501-8

PB - University of Groningen

CY - [Groningen]

ER -

ID: 55522250