SOI Thin Microdosimeters for High LET Single-Event Upset Studies in Fe, O, Xe, and Cocktail Ion Beam FieldsJames, B., Povoli, M., Kok, A., Goethem, M-J., Nancarrow, M., Matsufuji, N., Jackson, M., Rosenfeld, A. B., Tran, L. T., Bolst, D., Peracchi, S., Davis, J. A., Prokopovich, D. A., Guatelli, S., Petasecca, M. & Lerch, M., Jan-2020, In : IEEE Transactions on Nuclear Science. 67, 1, p. 146-153 8 p.
Research output: Contribution to journal › Article › Academic › peer-review
The response of a 5-mu m-thin silicon on insulator (SOI) 3-D microdosimeter was investigated for single-event upset applications by measuring the linear energy transfer (LET) of different high LET ions. The charge collection characteristics of the device were performed using the ion beam-induced charge collection (IBIC) technique with 3- and 5.5-MeV He2+ ions incident on the microdosimeter. The microdosimeter was irradiated with O-16, Fe-56, and Xe-124 ions and was able to determine the LET within 5% for most configurations apart from Xe-124. It was observed that on average, measured LET was 12% lower for 30-MeV/u Xe-124 ion traversing through different thickness Kapton absorbers in comparison to Geant4 simulations. This discrepancy can be partly attributed to uncertainties in the thickness of the energy degraders and the thickness of the SOI layer of the devices. The effects of overlayer thickness variation are not easily observed for ions with much lower LET as O and Fe. Based on that, it is difficult to make conclusion that the plasma effect is observed for 30-MeV/u(124)Xe ions and further research to be carried out for ion with LET higher than 12 MeV/mu m.
|Number of pages||8|
|Journal||IEEE Transactions on Nuclear Science|
|Publication status||Published - Jan-2020|
|Event||56th Annual IEEE International Nuclear and Space Radiation Effects Conference (IEEE NSREC) - San Antonio|
Duration: 8-Jul-2019 → 12-Jul-2019
56th Annual IEEE International Nuclear and Space Radiation Effects Conference (IEEE NSREC)
08/07/2019 → 12/07/2019San Antonio
- Geant, hadron therapy, linear energy transfer (LET), microdosimetry, silicon-on-insulator (SOI) technology, single event upsets, RADIATION, SIMULATION, DETECTORS