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SOI Thin Microdosimeters for High LET Single-Event Upset Studies in Fe, O, Xe, and Cocktail Ion Beam Fields

James, B., Povoli, M., Kok, A., Goethem, M-J., Nancarrow, M., Matsufuji, N., Jackson, M., Rosenfeld, A. B., Tran, L. T., Bolst, D., Peracchi, S., Davis, J. A., Prokopovich, D. A., Guatelli, S., Petasecca, M. & Lerch, M., Jan-2020, In : IEEE Transactions on Nuclear Science. 67, 1, p. 146-153 8 p.

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  • SOI Thin Microdosimeters for High LET Single-Event Upset Studies in Fe, O, Xe, and Cocktail Ion Beam Fields

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DOI

  • Benjamin James
  • Marco Povoli
  • Angela Kok
  • Marc-Jan Goethem
  • Mitchell Nancarrow
  • Naruhiro Matsufuji
  • Michael Jackson
  • Anatoly B. Rosenfeld
  • Linh T. Tran
  • David Bolst
  • Stefania Peracchi
  • Jeremy A. Davis
  • Dale A. Prokopovich
  • Susanna Guatelli
  • Marco Petasecca
  • Michael Lerch

The response of a 5-mu m-thin silicon on insulator (SOI) 3-D microdosimeter was investigated for single-event upset applications by measuring the linear energy transfer (LET) of different high LET ions. The charge collection characteristics of the device were performed using the ion beam-induced charge collection (IBIC) technique with 3- and 5.5-MeV He2+ ions incident on the microdosimeter. The microdosimeter was irradiated with O-16, Fe-56, and Xe-124 ions and was able to determine the LET within 5% for most configurations apart from Xe-124. It was observed that on average, measured LET was 12% lower for 30-MeV/u Xe-124 ion traversing through different thickness Kapton absorbers in comparison to Geant4 simulations. This discrepancy can be partly attributed to uncertainties in the thickness of the energy degraders and the thickness of the SOI layer of the devices. The effects of overlayer thickness variation are not easily observed for ions with much lower LET as O and Fe. Based on that, it is difficult to make conclusion that the plasma effect is observed for 30-MeV/u(124)Xe ions and further research to be carried out for ion with LET higher than 12 MeV/mu m.

Original languageEnglish
Pages (from-to)146-153
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume67
Issue number1
Publication statusPublished - Jan-2020
Event56th Annual IEEE International Nuclear and Space Radiation Effects Conference (IEEE NSREC) - San Antonio
Duration: 8-Jul-201912-Jul-2019

Event

56th Annual IEEE International Nuclear and Space Radiation Effects Conference (IEEE NSREC)

08/07/201912/07/2019

San Antonio

Event: Conference

    Keywords

  • Geant, hadron therapy, linear energy transfer (LET), microdosimetry, silicon-on-insulator (SOI) technology, single event upsets, RADIATION, SIMULATION, DETECTORS

ID: 128656788