Suppressed spin dephasing for two-dimensional and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms

Denega, S. Z., Last, T., Liu, J., Slachter, A., Rizo, P. J., Loosdrecht, P. H. M. V., Wees, B. J. V., Reuter, D., Wieck, A. D. & Wal, C. H. V. D., 12-Apr-2010, In : Physical Review. B: Condensed Matter and Materials Physics. 81, 15, p. 11-15 4 p., 153302.

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We report a study of suppressed spin dephasing for quasi-one-dimensional electron ensembles in wires etched into a GaAs/AlGaAs heterojunction system. Time-resolved Kerr-rotation measurements show a suppression that is most pronounced for wires along the [110] crystal direction. This is the fingerprint of a suppression that is enhanced due to a strong anisotropy in spin-orbit fields that can occur when the Rashba and Dresselhaus contributions are engineered to cancel each other. A surprising observation is that this mechanism for suppressing spin dephasing is not only effective for electrons in the heterojunction quantum well but also for electrons in a deeper bulk layer.

Original languageEnglish
Article number153302
Pages (from-to)11-15
Number of pages4
JournalPhysical Review. B: Condensed Matter and Materials Physics
Issue number15
Publication statusPublished - 12-Apr-2010



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