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Probing and Tuning the Spin Textures of the K and Q Valleys in Few-Layer MoS2

Chen, Q., El Yumin, A. A., Zheliuk, O., Wan, P., Liang, M., Peng, X. & Ye, J., Dec-2019, In : Physica status solidi-Rapid research letters. 13, 12, 6 p., 1900333.

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  • Probing and Tuning the Spin Textures of the K and QValleys in Few-Layer MoS2

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DOI

The strong spin-orbit coupling along with broken inversion symmetry in transition metal dichalcogenides (TMDs) results in spin polarized valleys, which are the origins of many interesting properties such as Ising superconductivity, circular dichroism, valley Hall effect, etc. Herein, it is shown that encapsulating few-layer MoS2 between hexagonal boron nitride (h-BN) and gating the electrical contacts by ionic liquid pronounce Shubnikov-de Haas (SdH) oscillations in magnetoresistance. Notably, the SdH oscillations remain unchanged in tilted magnetic fields, demonstrating that the spins of the Q/Q ' valleys are firmly locked to the out-of-plane direction; therefore, Zeeman energy is insensitive to the in-plane magnetic field. Ionic liquid gating induces superconductivity on the surface of unencapsulated MoS2. The spins of Cooper pairs are strongly pinned to the out-of-plane direction by the effective Zeeman field, hence are protected from being realigned by an in-plane magnetic field, namely, Ising protection. As a result, superconductivity persists in an in-plane magnetic field up to 14 T, in which T-c only decreases by approximate to 0.3 K from T-c0 as approximate to 7 K. By applying back gate, the strength of Ising protection can be effectively tuned, where an increase in 70% is observed when back gate changes from +90 to -90 V.

Original languageEnglish
Article number1900333
Number of pages6
JournalPhysica status solidi-Rapid research letters
Volume13
Issue number12
Publication statusPublished - Dec-2019

    Keywords

  • few-layer MoS2, ionic liquid gating, Ising superconductivity, Shubnikov-de Haas oscillations, spin polarization, ELECTRONIC TRANSPORT, MONOLAYER, SUPERCONDUCTIVITY, TRANSITION

ID: 118256419