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Out-of-plane interface dipoles and anti-hysteresis in graphene-strontium titanate hybrid transistor

Sahoo, A., Nafday, D., Paul, T., Ruiter, R., Roy, A., Mostovoy, M., Banerjee, T., Saha-Dasgupta, T. & Ghosh, A., 9-Apr-2018, In : Npj 2d materials and applications. 2, 7 p., 9.

Research output: Contribution to journalArticleAcademicpeer-review

The out-of-plane electric polarization at the surface of SrTiO3 (STO), an archetypal perovskite oxide, may stabilize new electronic states and/or host novel device functionality. This is particularly significant in proximity to atomically thin membranes, such as graphene, although a quantitative understanding of the polarization across graphene-STO interface remains experimentally elusive. Here, we report direct observation and measurement of a large intrinsic out-of-plane polarization at the interface of singlelayer graphene and TiO2-terminated STO (100) crystal. Using a unique temperature dependence of anti-hysteretic gate-transfer characteristics in dual-gated graphene-on-STO field-effect transistors, we estimate the polarization to be as large as approximate to 12 mu Ccm(-2), which is also supported by the density functional theory calculations and low-frequency noise measurements. The anti-hysteretic transfer characteristics is quantitatively shown to arise from an interplay of band bending at the STO surface and electrostatic potential due to interface polarization, which may be a generic feature in hybrid electronic devices from two-dimensional materials and perovskite oxides.

Original languageEnglish
Article number9
Number of pages7
JournalNpj 2d materials and applications
Volume2
Publication statusPublished - 9-Apr-2018

    Keywords

  • FIELD-EFFECT TRANSISTORS, AUGMENTED-WAVE METHOD, DIELECTRIC-CONSTANT, 1/F NOISE, SRTIO3, FERROELECTRICITY, OXIDES, ELECTRONICS, SURFACES, DEVICES

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