Publication

On the mechanism of ion-induced bending of nanostructures

Ribas Gomes, D., Turkin, A., Vainchtein, D. & De Hosson, J. T. M., 15-Jul-2018, In : Applied Surface Science. 446, SI, p. 151-159 9 p.

Research output: Contribution to journalArticleAcademicpeer-review

APA

Ribas Gomes, D., Turkin, A., Vainchtein, D., & De Hosson, J. T. M. (2018). On the mechanism of ion-induced bending of nanostructures. Applied Surface Science, 446(SI), 151-159. https://doi.org/10.1016/j.apsusc.2018.02.015

Author

Ribas Gomes, Diego ; Turkin, A. ; Vainchtein, David ; De Hosson, J. T. M. / On the mechanism of ion-induced bending of nanostructures. In: Applied Surface Science. 2018 ; Vol. 446, No. SI. pp. 151-159.

Harvard

Ribas Gomes, D, Turkin, A, Vainchtein, D & De Hosson, JTM 2018, 'On the mechanism of ion-induced bending of nanostructures', Applied Surface Science, vol. 446, no. SI, pp. 151-159. https://doi.org/10.1016/j.apsusc.2018.02.015

Standard

On the mechanism of ion-induced bending of nanostructures. / Ribas Gomes, Diego; Turkin, A.; Vainchtein, David; De Hosson, J. T. M.

In: Applied Surface Science, Vol. 446, No. SI, 15.07.2018, p. 151-159.

Research output: Contribution to journalArticleAcademicpeer-review

Vancouver

Ribas Gomes D, Turkin A, Vainchtein D, De Hosson JTM. On the mechanism of ion-induced bending of nanostructures. Applied Surface Science. 2018 Jul 15;446(SI):151-159. https://doi.org/10.1016/j.apsusc.2018.02.015


BibTeX

@article{4c18b83b5b9f4473a6894bfbe9300f4b,
title = "On the mechanism of ion-induced bending of nanostructures",
abstract = "This contribution concentrates on ion-induced bending phenomena which may serve as a versatile tool to manufacture nanostructured devices. In particular bending was studied in free standing Au cantilevers. The preparation and irradiation of the cantilevers were performed using a TESCAN LYRA dual beam system. Cantilevers with thicknesses ranging between 90 and 200 nm were irradiated with 30 keV Ga ions normal to the sample surface up to a maximum fluence of ∼3 × 1020 Ga/m2. The bending of the cantilevers towards the incident beam is discussed in terms of local volume change due to accumulation of radiation-induced vacancies and substitutional Ga atoms in the Ga implantation layer, as well as due to accumulation of interstitial type clusters in the region beyond the Ga penetration range. A model is proposed to explain the observations, based on a set of rate equations for concentrations of point defects, i.e. vacancies, self-interstitials and implanted Ga atoms. The influence of preexisting defects is also discussed. The work shows that an in-depth understanding the ion-beam bending can play a predictive role in a quantitative control in for the micro- and nanofabrication of small-sized products.",
author = "{Ribas Gomes}, Diego and A. Turkin and David Vainchtein and {De Hosson}, {J. T. M.}",
year = "2018",
month = "7",
day = "15",
doi = "10.1016/j.apsusc.2018.02.015",
language = "English",
volume = "446",
pages = "151--159",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "ELSEVIER SCIENCE BV",
number = "SI",

}

RIS

TY - JOUR

T1 - On the mechanism of ion-induced bending of nanostructures

AU - Ribas Gomes, Diego

AU - Turkin, A.

AU - Vainchtein, David

AU - De Hosson, J. T. M.

PY - 2018/7/15

Y1 - 2018/7/15

N2 - This contribution concentrates on ion-induced bending phenomena which may serve as a versatile tool to manufacture nanostructured devices. In particular bending was studied in free standing Au cantilevers. The preparation and irradiation of the cantilevers were performed using a TESCAN LYRA dual beam system. Cantilevers with thicknesses ranging between 90 and 200 nm were irradiated with 30 keV Ga ions normal to the sample surface up to a maximum fluence of ∼3 × 1020 Ga/m2. The bending of the cantilevers towards the incident beam is discussed in terms of local volume change due to accumulation of radiation-induced vacancies and substitutional Ga atoms in the Ga implantation layer, as well as due to accumulation of interstitial type clusters in the region beyond the Ga penetration range. A model is proposed to explain the observations, based on a set of rate equations for concentrations of point defects, i.e. vacancies, self-interstitials and implanted Ga atoms. The influence of preexisting defects is also discussed. The work shows that an in-depth understanding the ion-beam bending can play a predictive role in a quantitative control in for the micro- and nanofabrication of small-sized products.

AB - This contribution concentrates on ion-induced bending phenomena which may serve as a versatile tool to manufacture nanostructured devices. In particular bending was studied in free standing Au cantilevers. The preparation and irradiation of the cantilevers were performed using a TESCAN LYRA dual beam system. Cantilevers with thicknesses ranging between 90 and 200 nm were irradiated with 30 keV Ga ions normal to the sample surface up to a maximum fluence of ∼3 × 1020 Ga/m2. The bending of the cantilevers towards the incident beam is discussed in terms of local volume change due to accumulation of radiation-induced vacancies and substitutional Ga atoms in the Ga implantation layer, as well as due to accumulation of interstitial type clusters in the region beyond the Ga penetration range. A model is proposed to explain the observations, based on a set of rate equations for concentrations of point defects, i.e. vacancies, self-interstitials and implanted Ga atoms. The influence of preexisting defects is also discussed. The work shows that an in-depth understanding the ion-beam bending can play a predictive role in a quantitative control in for the micro- and nanofabrication of small-sized products.

U2 - 10.1016/j.apsusc.2018.02.015

DO - 10.1016/j.apsusc.2018.02.015

M3 - Article

VL - 446

SP - 151

EP - 159

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

IS - SI

ER -

ID: 64493778