Nanodomain Engineering in Ferroelectric Capacitors with Graphene ElectrodesLu, H., Wang, B., Li, T., Lipatov, A., Lee, H., Rajapitamahuni, A., Xu, R., Hong, X., Farokhipoor, S., Martin, L. W., Eom, C-B., Chen, L-Q., Sinitskii, A. & Gruyerman, A., Oct-2016, In : Nano Letters. 16, 10, p. 6460-6466 7 p.
Research output: Contribution to journal › Article › Academic › peer-review
Polarization switching in ferroelectric capacitors is typically realized by application of an electrical bias to the capacitor electrodes and occurs via a complex process of domain structure reorganization. As the domain evolution in real devices is governed by the distribution of the nucleation centers, obtaining a domain structure of a desired configuration by electrical pulsing is challenging, if not impossible. Recent discovery of polarization reversal via the flexoelectric effect has opened a possibility for deterministic control of polarization in ferroelectric capacitors. In this paper, we demonstrate mechanical writing of arbitrary-shaped nanoscale domains in thin-film ferroelectric capacitors with graphene electrodes facilitated by a strain gradient induced by a tip of an atomic force microscope (AFM). A phase-field modeling prediction of a strong effect of graphene thickness on the threshold load required to initiate mechanical switching has been confirmed experimentally. Deliberate voltage-free domain writing represents a viable approach for development of functional devices based on domain topology and electronic properties of the domains and domain walls.
|Number of pages||7|
|Publication status||Published - Oct-2016|
- Flexoelectric switching, graphene, domain engineering, ferroelectric films, PIEZORESPONSE FORCE MICROSCOPY, BATIO3 THIN-FILMS, TUNNEL-JUNCTIONS, DOMAIN-WALLS, NANOSCALE, CONDUCTION, THICKNESS, MEMRISTOR, STABILITY, EVOLUTION