Modulation of magnon spin transport in a magnetic gate transistor

Das, K. S., Feringa, F., Middelkamp, M., van Wees, B. J. & Vera-Marun, I. J., 25-Feb-2020, In : Physical Review B. 101, 5, 5 p., 054436.

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  • Modulation of magnon spin transport in a magnetic gate transistor

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We demonstrate a modulation of up to 18% in the magnon spin transport in a magnetic insulator (Y3Fe5O12, YIG) using a common ferromagnetic metal (permalloy, Py) as a magnetic control gate. A Py electrode, placed between two Pt injector and detector electrodes, acts as a magnetic gate in our prototypical magnon transistor device. By manipulating the magnetization direction of Py with respect to that of YIG, the transmission of magnons through the Py vertical bar YIG interface can be controlled, resulting in a modulation of the nonequilibrium magnon density in the YIG channel between the Pt injector and detector electrodes. This study opens up the possibility of using the magnetic gating effect for magnon-based spin logic applications.

Original languageEnglish
Article number054436
Number of pages5
JournalPhysical Review B
Issue number5
Publication statusPublished - 25-Feb-2020

ID: 128073836