Minimizing Voltage Loss in Wide-Bandgap Perovskites for Tandem Solar Cells

Jaysankar, M., Raul, B. A. L., Bastos, J., Burgess, C., Weijtens, C., Creatore, M., Aernouts, T., Kuang, Y., Gehlhaar, R., Hadipour, A. & Poortmans, J., Jan-2019, In : ACS Energy Letters. 4, 1, p. 259-264 11 p.

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  • Minimizing Voltage Loss in Wide-Bandgap Perovskites for Tandem Solar Cells

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  • Manoj Jaysankar
  • Benedito A. L. Raul
  • Joao Bastos
  • Claire Burgess
  • Christ Weijtens
  • Mariadriana Creatore
  • Tom Aernouts
  • Yinghuan Kuang
  • Robert Gehlhaar
  • Afshin Hadipour
  • Jef Poortmans

Perovskites with bandgaps between 1.7 and 1.8 eV are optimal for tandem configurations with crystalline silicon (c-Si) because they facilitate efficient harvest of solar energy. In that respect, achieving a high open-circuit voltage (V-OC) in such wide-bandgap perovskite solar cells is crucial for a high overall power conversion efficiency (PCE). Here, we provide key insights into the factors affecting the V-OC in wide-bandgap perovskite solar cells. We show that the influence of the hole transport layer (HTL) on V-OC is not simply through its ionization potential but mainly through the quality of the perovskite-HTL interface. With effective interface passivation, we demonstrate perovskite solar cells with a bandgap of 1.72 eV that exhibit a V-OC of 1.22 V. Furthermore, by combining the high-V-OC perovskite solar cell with a c-Si solar cell, we demonstrate a perovskite-Si four-terminal tandem solar cell with a PCE of 27.1%, exceeding the record PCE of single-junction Si solar cells.

Original languageEnglish
Pages (from-to)259-264
Number of pages11
JournalACS Energy Letters
Issue number1
Publication statusPublished - Jan-2019



ID: 102704113