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Magneto-ionic control of spin polarization in multiferroic tunnel junctions

Wei, Y., Matzen, S., Quinteros, C. P., Maroutian, T., Agnus, G., Lecoeur, P. & Noheda, B., 17-Dec-2019, In : Npj Quantum Materials. 4, 6 p., 62.

Research output: Contribution to journalArticleAcademicpeer-review

Multiferroic tunnel junctions (MFTJs) with Hf0.5Zr0.5O2 barriers are reported to show both tunneling magnetoresistance effect (TMR) and tunneling electroresistance effect (TER), displaying four resistance states by magnetic and electric field switching. Here we show that, under electric field cycling of large enough magnitude, the TER can reach values as large as 10(6)%. Moreover, concomitant with this TER enhancement, the devices develop electrical control of spin polarization, with sign reversal of the TMR effect. Currently, this intermediate state exists for a limited number of cycles and understanding the origin of these phenomena is key to improve its stability. The experiments presented here point to the magneto-ionic effect as the origin of the large TER and strong magneto-electric coupling, showing that ferroelectric polarization switching of the tunnel barrier is not the main contribution.

Original languageEnglish
Article number62
Number of pages6
JournalNpj Quantum Materials
Volume4
Publication statusPublished - 17-Dec-2019

    Keywords

  • MAGNETORESISTANCE, TRANSITION, PERSISTENT, INTERFACE, PROSPECTS, REVERSAL, MEMORY

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