Low-voltage organic transistors based on solution processed semiconductors and self-assembled monolayer gate dielectrics

Woebkenberg, P. H., Ball, J., Kooistra, F. B., Hummelen, J. C., de Leeuw, D. M., Bradley, D. D. C. & Anthopoulos, T. D., 7-Jul-2008, In : Applied Physics Letters. 93, 1, 3 p., 013303.

Research output: Contribution to journalArticleAcademicpeer-review

  • Paul H. Woebkenberg
  • James Ball
  • Floris B. Kooistra
  • Jan C. Hummelen
  • Dago M. de Leeuw
  • Donal D. C. Bradley
  • Thomas D. Anthopoulos
Reduction in the operating voltage of organic transistors is of high importance for successful implementation in low-power electronic applications. Here we report on low-voltage n-channel transistors fabricated employing a combination of soluble organic semiconductors and a self-assembled gate dielectric. The high geometric capacitance of the nanodielectric allows transistor operation below 2 V. Solution processing is enabled by analysis of the surface energy compatibility of the dielectric and semiconductor solutions. Electron mobilities in the range of 0.01-0.04 cm(2)/V s and threshold voltages
Original languageEnglish
Article number013303
Number of pages3
JournalApplied Physics Letters
Issue number1
Publication statusPublished - 7-Jul-2008



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