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Inducing and Manipulating Heteroelectronic States in a Single MoS2 Thin Flake

Chen, Q., Lu, J., Liang, L., Zheliuk, O., Ali El Yumin, A., Sheng, P. & Ye, J., 5-Oct-2017, In : Physical Review Letters. 119, 14, 6 p., 147002.

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By dual gating a few-layer MoS2 flake, we induce spatially separated electronic states showing superconductivity and Shubnikov–de Haas (SdH) oscillations. While the highly confined superconductivity forms at the K/K′ valleys of the topmost layer, the SdH oscillations are contributed by the electrons residing in the Q/Q′ valleys of the rest of the bottom layers, which is confirmed by the extracted Landau level degeneracy of 3, electron effective mass of 0.6me, and carrier density of 5×10^12  cm^−2. Mimicking conventional heterostructures, the interaction between the heteroelectronic states can be electrically manipulated, which enables “bipolarlike” superconducting transistor operation. The off-on-off switching pattern can be continuously accessed at low temperatures by a field effect depletion of carriers with a negative back gate bias and the proximity effect between the top superconducting layer and the bottom metallic layers that quenches the superconductivity at a positive back gate bias.
Original languageEnglish
Article number147002
Number of pages6
JournalPhysical Review Letters
Volume119
Issue number14
Publication statusPublished - 5-Oct-2017

    Keywords

  • ELECTRONICS , FILMS, DER-WAALS HETEROSTRUCTURES, TRANSITION-METAL DICHALCOGENIDES, INDUCED SUPERCONDUCTIVITY, MONOLAYER WSE2, GATED MOS2, INSULATOR, ELECTRONICS

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