Publication

Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride

Zomer, P. J., Guimaraes, M. H. D., Brant, J. C., Tombros, N. & van Wees, B. J., 7-Jul-2014, In : Applied Physics Letters. 105, 1, 4 p., 013101.

Research output: Contribution to journalArticleAcademicpeer-review

APA

Zomer, P. J., Guimaraes, M. H. D., Brant, J. C., Tombros, N., & van Wees, B. J. (2014). Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride. Applied Physics Letters, 105(1), [013101]. https://doi.org/10.1063/1.4886096

Author

Zomer, P. J. ; Guimaraes, M. H. D. ; Brant, J. C. ; Tombros, N. ; van Wees, B. J. / Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride. In: Applied Physics Letters. 2014 ; Vol. 105, No. 1.

Harvard

Zomer, PJ, Guimaraes, MHD, Brant, JC, Tombros, N & van Wees, BJ 2014, 'Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride' Applied Physics Letters, vol. 105, no. 1, 013101. https://doi.org/10.1063/1.4886096

Standard

Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride. / Zomer, P. J.; Guimaraes, M. H. D.; Brant, J. C.; Tombros, N.; van Wees, B. J.

In: Applied Physics Letters, Vol. 105, No. 1, 013101, 07.07.2014.

Research output: Contribution to journalArticleAcademicpeer-review

Vancouver

Zomer PJ, Guimaraes MHD, Brant JC, Tombros N, van Wees BJ. Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride. Applied Physics Letters. 2014 Jul 7;105(1). 013101. https://doi.org/10.1063/1.4886096


BibTeX

@article{3212597af9344cfd97cdff8e077a4feb,
title = "Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride",
abstract = "We present a fast method to fabricate high quality heterostructure devices by picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to demonstrate this approach, showing good electronic quality with mobilities ranging from 17 000 cm(2) V-1 s(-1) at room temperature to 49 000 cm(2) V-1 s(-1) at 4.2 K, and entering the quantum Hall regime below 0.5 T. This method provides a strong and useful tool for the fabrication of future high quality layered crystal devices. (C) 2014 AIP Publishing LLC.",
keywords = "SCANNING-TUNNELING-MICROSCOPY, QUANTUM CAPACITANCE, SUSPENDED GRAPHENE, DIRAC FERMIONS, SUPERLATTICES, SPECTROSCOPY, CONFINEMENT, TRANSPORT, DEVICES",
author = "Zomer, {P. J.} and Guimaraes, {M. H. D.} and Brant, {J. C.} and N. Tombros and {van Wees}, {B. J.}",
year = "2014",
month = "7",
day = "7",
doi = "10.1063/1.4886096",
language = "English",
volume = "105",
journal = "Journal of Materials Research",
issn = "0003-6951",
publisher = "AMER INST PHYSICS",
number = "1",

}

RIS

TY - JOUR

T1 - Fast pick up technique for high quality heterostructures of bilayer graphene and hexagonal boron nitride

AU - Zomer, P. J.

AU - Guimaraes, M. H. D.

AU - Brant, J. C.

AU - Tombros, N.

AU - van Wees, B. J.

PY - 2014/7/7

Y1 - 2014/7/7

N2 - We present a fast method to fabricate high quality heterostructure devices by picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to demonstrate this approach, showing good electronic quality with mobilities ranging from 17 000 cm(2) V-1 s(-1) at room temperature to 49 000 cm(2) V-1 s(-1) at 4.2 K, and entering the quantum Hall regime below 0.5 T. This method provides a strong and useful tool for the fabrication of future high quality layered crystal devices. (C) 2014 AIP Publishing LLC.

AB - We present a fast method to fabricate high quality heterostructure devices by picking up crystals of arbitrary sizes. Bilayer graphene is encapsulated with hexagonal boron nitride to demonstrate this approach, showing good electronic quality with mobilities ranging from 17 000 cm(2) V-1 s(-1) at room temperature to 49 000 cm(2) V-1 s(-1) at 4.2 K, and entering the quantum Hall regime below 0.5 T. This method provides a strong and useful tool for the fabrication of future high quality layered crystal devices. (C) 2014 AIP Publishing LLC.

KW - SCANNING-TUNNELING-MICROSCOPY

KW - QUANTUM CAPACITANCE

KW - SUSPENDED GRAPHENE

KW - DIRAC FERMIONS

KW - SUPERLATTICES

KW - SPECTROSCOPY

KW - CONFINEMENT

KW - TRANSPORT

KW - DEVICES

U2 - 10.1063/1.4886096

DO - 10.1063/1.4886096

M3 - Article

VL - 105

JO - Journal of Materials Research

JF - Journal of Materials Research

SN - 0003-6951

IS - 1

M1 - 013101

ER -

ID: 77073476