Publication

Enabling Ambipolar to Heavy n-Type Transport in PbS Quantum Dot Solids through Doping with Organic Molecules

Nugraha, M. I., Kumagai, S., Watanabe, S., Sytnyk, M., Heiss, W., Loi, M. A. & Takeya, J., 31-May-2017, In : ACS Applied Materials & Interfaces. 9, 21, p. 18039-18045 7 p.

Research output: Contribution to journalArticleAcademicpeer-review

APA

Nugraha, M. I., Kumagai, S., Watanabe, S., Sytnyk, M., Heiss, W., Loi, M. A., & Takeya, J. (2017). Enabling Ambipolar to Heavy n-Type Transport in PbS Quantum Dot Solids through Doping with Organic Molecules. ACS Applied Materials & Interfaces, 9(21), 18039-18045. https://doi.org/10.1021/acsami.7b02867

Author

Nugraha, Mohamad Insan ; Kumagai, Shohei ; Watanabe, Shun ; Sytnyk, Mykhailo ; Heiss, Wolfgang ; Loi, Maria Antonietta ; Takeya, Jun. / Enabling Ambipolar to Heavy n-Type Transport in PbS Quantum Dot Solids through Doping with Organic Molecules. In: ACS Applied Materials & Interfaces. 2017 ; Vol. 9, No. 21. pp. 18039-18045.

Harvard

Nugraha, MI, Kumagai, S, Watanabe, S, Sytnyk, M, Heiss, W, Loi, MA & Takeya, J 2017, 'Enabling Ambipolar to Heavy n-Type Transport in PbS Quantum Dot Solids through Doping with Organic Molecules', ACS Applied Materials & Interfaces, vol. 9, no. 21, pp. 18039-18045. https://doi.org/10.1021/acsami.7b02867

Standard

Enabling Ambipolar to Heavy n-Type Transport in PbS Quantum Dot Solids through Doping with Organic Molecules. / Nugraha, Mohamad Insan; Kumagai, Shohei; Watanabe, Shun; Sytnyk, Mykhailo; Heiss, Wolfgang; Loi, Maria Antonietta; Takeya, Jun.

In: ACS Applied Materials & Interfaces, Vol. 9, No. 21, 31.05.2017, p. 18039-18045.

Research output: Contribution to journalArticleAcademicpeer-review

Vancouver

Nugraha MI, Kumagai S, Watanabe S, Sytnyk M, Heiss W, Loi MA et al. Enabling Ambipolar to Heavy n-Type Transport in PbS Quantum Dot Solids through Doping with Organic Molecules. ACS Applied Materials & Interfaces. 2017 May 31;9(21):18039-18045. https://doi.org/10.1021/acsami.7b02867


BibTeX

@article{42f355820d9c4cff9e517ae0ae3917a4,
title = "Enabling Ambipolar to Heavy n-Type Transport in PbS Quantum Dot Solids through Doping with Organic Molecules",
abstract = "PbS quantum dots (QDs) are remarkable semiconducting materials, which are compatible with low-cost solution-processed electronic device fabrication. Understanding the doping of these materials is one of the great research interests, as it is a necessary step to improve the device performance as well as to enhance the applicability of this system for diverse optoelectronic applications. Here, we report the efficient doping of the PbS QD films with the use of solution-processable organic molecules. By engineering the energy levels of the donor molecules and the PbS QDs through the use of different cross-linking ligands, we are able to control the characteristics of PbS field-effect transistors (FETs) from ambipolar to strongly n-type. Because the doping promotes trap filling, the charge carrier mobility is improved up to 0.64 cm(-2) V-1 s(-1), which is the highest mobility reported for low-temperature processed PbS FETs employing SiO2 as the gate dielectric. The doping also reduces the contact resistance of the devices, which can also explain the origin of the increased mobility.",
keywords = "quantum dots, benzyl viologen, doping, ligands, field-effect transistors, COLLOIDAL NANOCRYSTALS, POST-SYNTHESIS, INTEGRATION, EMISSION, MOBILITY",
author = "Nugraha, {Mohamad Insan} and Shohei Kumagai and Shun Watanabe and Mykhailo Sytnyk and Wolfgang Heiss and Loi, {Maria Antonietta} and Jun Takeya",
year = "2017",
month = "5",
day = "31",
doi = "10.1021/acsami.7b02867",
language = "English",
volume = "9",
pages = "18039--18045",
journal = "ACS Applied Materials & Interfaces",
issn = "1944-8244",
publisher = "AMER CHEMICAL SOC",
number = "21",

}

RIS

TY - JOUR

T1 - Enabling Ambipolar to Heavy n-Type Transport in PbS Quantum Dot Solids through Doping with Organic Molecules

AU - Nugraha, Mohamad Insan

AU - Kumagai, Shohei

AU - Watanabe, Shun

AU - Sytnyk, Mykhailo

AU - Heiss, Wolfgang

AU - Loi, Maria Antonietta

AU - Takeya, Jun

PY - 2017/5/31

Y1 - 2017/5/31

N2 - PbS quantum dots (QDs) are remarkable semiconducting materials, which are compatible with low-cost solution-processed electronic device fabrication. Understanding the doping of these materials is one of the great research interests, as it is a necessary step to improve the device performance as well as to enhance the applicability of this system for diverse optoelectronic applications. Here, we report the efficient doping of the PbS QD films with the use of solution-processable organic molecules. By engineering the energy levels of the donor molecules and the PbS QDs through the use of different cross-linking ligands, we are able to control the characteristics of PbS field-effect transistors (FETs) from ambipolar to strongly n-type. Because the doping promotes trap filling, the charge carrier mobility is improved up to 0.64 cm(-2) V-1 s(-1), which is the highest mobility reported for low-temperature processed PbS FETs employing SiO2 as the gate dielectric. The doping also reduces the contact resistance of the devices, which can also explain the origin of the increased mobility.

AB - PbS quantum dots (QDs) are remarkable semiconducting materials, which are compatible with low-cost solution-processed electronic device fabrication. Understanding the doping of these materials is one of the great research interests, as it is a necessary step to improve the device performance as well as to enhance the applicability of this system for diverse optoelectronic applications. Here, we report the efficient doping of the PbS QD films with the use of solution-processable organic molecules. By engineering the energy levels of the donor molecules and the PbS QDs through the use of different cross-linking ligands, we are able to control the characteristics of PbS field-effect transistors (FETs) from ambipolar to strongly n-type. Because the doping promotes trap filling, the charge carrier mobility is improved up to 0.64 cm(-2) V-1 s(-1), which is the highest mobility reported for low-temperature processed PbS FETs employing SiO2 as the gate dielectric. The doping also reduces the contact resistance of the devices, which can also explain the origin of the increased mobility.

KW - quantum dots

KW - benzyl viologen

KW - doping

KW - ligands

KW - field-effect transistors

KW - COLLOIDAL NANOCRYSTALS

KW - POST-SYNTHESIS

KW - INTEGRATION

KW - EMISSION

KW - MOBILITY

U2 - 10.1021/acsami.7b02867

DO - 10.1021/acsami.7b02867

M3 - Article

VL - 9

SP - 18039

EP - 18045

JO - ACS Applied Materials & Interfaces

JF - ACS Applied Materials & Interfaces

SN - 1944-8244

IS - 21

ER -

ID: 97433066