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Electronic spin drift in graphene field-effect transistors

Jozsa, C., Popinciuc, M., Tombros, N., Jonkman, H. T. & van Wees, B. J., 13-Jun-2008, In : Physical Review Letters. 100, 23, 4 p., 236603.

Research output: Contribution to journalArticleAcademicpeer-review

We studied the drift of electron spins under an applied dc electric field in single layer graphene spin valves in a field-effect transport geometry at room temperature. In the metallic conduction regime (n similar or equal to 3.5x10(16) m(-2)), for dc fields of about +/- 70 kV/m applied between the spin injector and spin detector, the spin valve signals are increased or decreased, depending on the direction of the dc field and the carrier type, by as much as +/- 50%. Sign reversal of the drift effect is observed when switching from hole to electron conduction. In the vicinity of the Dirac neutrality point the drift effect is strongly suppressed. The experiments are in quantitative agreement with a drift-diffusion model of spin transport.

Original languageEnglish
Article number236603
Number of pages4
JournalPhysical Review Letters
Volume100
Issue number23
Publication statusPublished - 13-Jun-2008

    Keywords

  • ROOM-TEMPERATURE, INJECTION, TRANSPORT, DEVICES

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