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Electric field driven memristive behavior at the Schottky interface of Nb-doped SrTiO3
Goossens, A. S., Das, A. & Banerjee, T., 21-Oct-2018, In : Journal of Applied Physics. 124, 15, 6 p., 152102.Research output: Contribution to journal › Article › Academic › peer-review
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Electric field driven memristive behavior at the Schottky interface of Nb-doped SrTiO3. / Goossens, A. S.; Das, A.; Banerjee, T.
In: Journal of Applied Physics, Vol. 124, No. 15, 152102, 21.10.2018.Research output: Contribution to journal › Article › Academic › peer-review
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TY - JOUR
T1 - Electric field driven memristive behavior at the Schottky interface of Nb-doped SrTiO3
AU - Goossens, A. S.
AU - Das, A.
AU - Banerjee, T.
PY - 2018/10/21
Y1 - 2018/10/21
N2 - Computing inspired by the human brain requires a massive parallel architecture of low-power consuming elements of which the internal state can be changed. SrTiO3 is a complex oxide that offers rich electronic properties; here, Schottky contacts on Nb-doped SrTiO3 are demonstrated as memristive elements for neuromorphic computing. The electric field at the Schottky interface alters the conductivity of these devices in an analog fashion, which is important for mimicking synaptic plasticity. Promising power consumption and endurance characteristics are observed. The resistance states are shown to emulate the forgetting process of the brain. A charge trapping model is proposed to explain the switching behavior. Published by AIP Publishing.
AB - Computing inspired by the human brain requires a massive parallel architecture of low-power consuming elements of which the internal state can be changed. SrTiO3 is a complex oxide that offers rich electronic properties; here, Schottky contacts on Nb-doped SrTiO3 are demonstrated as memristive elements for neuromorphic computing. The electric field at the Schottky interface alters the conductivity of these devices in an analog fashion, which is important for mimicking synaptic plasticity. Promising power consumption and endurance characteristics are observed. The resistance states are shown to emulate the forgetting process of the brain. A charge trapping model is proposed to explain the switching behavior. Published by AIP Publishing.
KW - DEVICES
KW - MEMORY
U2 - 10.1063/1.5037965
DO - 10.1063/1.5037965
M3 - Article
VL - 124
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 15
M1 - 152102
ER -
ID: 67851782