Publication

Electric field driven memristive behavior at the Schottky interface of Nb-doped SrTiO3

Goossens, A. S., Das, A. & Banerjee, T., 21-Oct-2018, In : Journal of Applied Physics. 124, 15, 6 p., 152102.

Research output: Contribution to journalArticleAcademicpeer-review

APA

Goossens, A. S., Das, A., & Banerjee, T. (2018). Electric field driven memristive behavior at the Schottky interface of Nb-doped SrTiO3. Journal of Applied Physics, 124(15), [152102]. https://doi.org/10.1063/1.5037965

Author

Goossens, A. S. ; Das, A. ; Banerjee, T. / Electric field driven memristive behavior at the Schottky interface of Nb-doped SrTiO3. In: Journal of Applied Physics. 2018 ; Vol. 124, No. 15.

Harvard

Goossens, AS, Das, A & Banerjee, T 2018, 'Electric field driven memristive behavior at the Schottky interface of Nb-doped SrTiO3' Journal of Applied Physics, vol. 124, no. 15, 152102. https://doi.org/10.1063/1.5037965

Standard

Electric field driven memristive behavior at the Schottky interface of Nb-doped SrTiO3. / Goossens, A. S.; Das, A.; Banerjee, T.

In: Journal of Applied Physics, Vol. 124, No. 15, 152102, 21.10.2018.

Research output: Contribution to journalArticleAcademicpeer-review

Vancouver

Goossens AS, Das A, Banerjee T. Electric field driven memristive behavior at the Schottky interface of Nb-doped SrTiO3. Journal of Applied Physics. 2018 Oct 21;124(15). 152102. https://doi.org/10.1063/1.5037965


BibTeX

@article{d26452711bb84ec986dce197e2a1c11b,
title = "Electric field driven memristive behavior at the Schottky interface of Nb-doped SrTiO3",
abstract = "Computing inspired by the human brain requires a massive parallel architecture of low-power consuming elements of which the internal state can be changed. SrTiO3 is a complex oxide that offers rich electronic properties; here, Schottky contacts on Nb-doped SrTiO3 are demonstrated as memristive elements for neuromorphic computing. The electric field at the Schottky interface alters the conductivity of these devices in an analog fashion, which is important for mimicking synaptic plasticity. Promising power consumption and endurance characteristics are observed. The resistance states are shown to emulate the forgetting process of the brain. A charge trapping model is proposed to explain the switching behavior. Published by AIP Publishing.",
keywords = "DEVICES, MEMORY",
author = "Goossens, {A. S.} and A. Das and T. Banerjee",
year = "2018",
month = "10",
day = "21",
doi = "10.1063/1.5037965",
language = "English",
volume = "124",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "AMER INST PHYSICS",
number = "15",

}

RIS

TY - JOUR

T1 - Electric field driven memristive behavior at the Schottky interface of Nb-doped SrTiO3

AU - Goossens, A. S.

AU - Das, A.

AU - Banerjee, T.

PY - 2018/10/21

Y1 - 2018/10/21

N2 - Computing inspired by the human brain requires a massive parallel architecture of low-power consuming elements of which the internal state can be changed. SrTiO3 is a complex oxide that offers rich electronic properties; here, Schottky contacts on Nb-doped SrTiO3 are demonstrated as memristive elements for neuromorphic computing. The electric field at the Schottky interface alters the conductivity of these devices in an analog fashion, which is important for mimicking synaptic plasticity. Promising power consumption and endurance characteristics are observed. The resistance states are shown to emulate the forgetting process of the brain. A charge trapping model is proposed to explain the switching behavior. Published by AIP Publishing.

AB - Computing inspired by the human brain requires a massive parallel architecture of low-power consuming elements of which the internal state can be changed. SrTiO3 is a complex oxide that offers rich electronic properties; here, Schottky contacts on Nb-doped SrTiO3 are demonstrated as memristive elements for neuromorphic computing. The electric field at the Schottky interface alters the conductivity of these devices in an analog fashion, which is important for mimicking synaptic plasticity. Promising power consumption and endurance characteristics are observed. The resistance states are shown to emulate the forgetting process of the brain. A charge trapping model is proposed to explain the switching behavior. Published by AIP Publishing.

KW - DEVICES

KW - MEMORY

U2 - 10.1063/1.5037965

DO - 10.1063/1.5037965

M3 - Article

VL - 124

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 15

M1 - 152102

ER -

ID: 67851782