Domain wall magnetoresistance in BiFeO3 thin films measured by scanning probe microscopyDomingo, N., Farokhipoor, S., Santiso, J., Noheda, B. & Catalan, G., 23-Aug-2017, In : Journal of Physics-Condensed Matter. 29, 33, 6 p., 334003.
Research output: Contribution to journal › Article › Academic › peer-review
We measure the magnetotransport properties of individual 71 degrees domain walls in multiferroic BiFeO3 by means of conductive-atomic force microscopy (C-AFM) in the presence of magnetic fields up to one Tesla. The results suggest anisotropic magnetoresistance at room temperature, with the sign of the magnetoresistance depending on the relative orientation between the magnetic field and the domain wall plane. A consequence of this finding is that macroscopically averaged magnetoresistance measurements for domain wall bunches are likely to underestimate the magnetoresistance of each individual domain wall.
|Number of pages||6|
|Journal||Journal of Physics-Condensed Matter|
|Publication status||Published - 23-Aug-2017|
- domain walls, BiFeO3, multiferroic, magnetoresistance, atomic force microscope, scanning probe microscopy, SEMICONDUCTORS, CONDUCTION, CRYSTALS