Domain wall magnetoresistance in BiFeO3 thin films measured by scanning probe microscopy

Domingo, N., Farokhipoor, S., Santiso, J., Noheda, B. & Catalan, G., 23-Aug-2017, In : Journal of Physics-Condensed Matter. 29, 33, 6 p., 334003.

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  • Domain wall magnetoresistance in BiFeO3

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  • N. Domingo
  • S. Farokhipoor
  • J. Santiso
  • B. Noheda
  • G. Catalan

We measure the magnetotransport properties of individual 71 degrees domain walls in multiferroic BiFeO3 by means of conductive-atomic force microscopy (C-AFM) in the presence of magnetic fields up to one Tesla. The results suggest anisotropic magnetoresistance at room temperature, with the sign of the magnetoresistance depending on the relative orientation between the magnetic field and the domain wall plane. A consequence of this finding is that macroscopically averaged magnetoresistance measurements for domain wall bunches are likely to underestimate the magnetoresistance of each individual domain wall.

Original languageEnglish
Article number334003
Number of pages6
JournalJournal of Physics-Condensed Matter
Issue number33
Publication statusPublished - 23-Aug-2017


  • domain walls, BiFeO3, multiferroic, magnetoresistance, atomic force microscope, scanning probe microscopy, SEMICONDUCTORS, CONDUCTION, CRYSTALS

ID: 47967679