Domain Selectivity in BiFeO3 Thin Films by Modified Substrate TerminationSolmaz, A., Huijben, M., Koster, G., Egoavil, R., Gauquelin, N., Van Tendeloo, G., Verbeeck, J., Noheda, B. & Rijnders, G., 3-May-2016, In : Advanced Functional Materials. 26, 17, p. 2882-2889 8 p.
Research output: Contribution to journal › Article › Academic › peer-review
Ferroelectric domain formation is an essential feature in ferroelectric thin films. These domains and domain walls can be manipulated depending on the growth conditions. In rhombohedral BiFeO3 thin films, the ordering of the domains and the presence of specific types of domain walls play a crucial role in attaining unique ferroelectric and magnetic properties. In this study, controlled ordering of domains in BiFeO3 film is presented, as well as a controlled selectivity between two types of domain walls is presented, i.e., 71 degrees and 109 degrees, by modifying the substrate termination. The experiments on two different substrates, namely SrTiO3 and TbScO3, strongly indicate that the domain selectivity is determined by the growth kinetics of the initial BiFeO3 layers.
|Number of pages||8|
|Journal||Advanced Functional Materials|
|Publication status||Published - 3-May-2016|
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