Publication

Domain Selectivity in BiFeO3 Thin Films by Modified Substrate Termination

Solmaz, A., Huijben, M., Koster, G., Egoavil, R., Gauquelin, N., Van Tendeloo, G., Verbeeck, J., Noheda, B. & Rijnders, G., 3-May-2016, In : Advanced Functional Materials. 26, 17, p. 2882-2889 8 p.

Research output: Contribution to journalArticleAcademicpeer-review

  • Alim Solmaz
  • Mark Huijben
  • Gertjan Koster
  • Ricardo Egoavil
  • Nicolas Gauquelin
  • Gustaaf Van Tendeloo
  • Jo Verbeeck
  • Beatriz Noheda
  • Guus Rijnders

Ferroelectric domain formation is an essential feature in ferroelectric thin films. These domains and domain walls can be manipulated depending on the growth conditions. In rhombohedral BiFeO3 thin films, the ordering of the domains and the presence of specific types of domain walls play a crucial role in attaining unique ferroelectric and magnetic properties. In this study, controlled ordering of domains in BiFeO3 film is presented, as well as a controlled selectivity between two types of domain walls is presented, i.e., 71 degrees and 109 degrees, by modifying the substrate termination. The experiments on two different substrates, namely SrTiO3 and TbScO3, strongly indicate that the domain selectivity is determined by the growth kinetics of the initial BiFeO3 layers.

Original languageEnglish
Pages (from-to)2882-2889
Number of pages8
JournalAdvanced Functional Materials
Volume26
Issue number17
Publication statusPublished - 3-May-2016

    Keywords

  • MEAN FREE PATHS, FERROELECTRIC-FILMS, NANOSCALE CONTROL, CRYSTAL-SURFACES, 50-2000-EV RANGE, GROWTH

ID: 34502708