Publication

Controlling the efficiency of spin injection into graphene by carrier drift

Jozsa, C., Popinciuc, M., Tombros, N., Jonkman, H. T. & van Wees, B. J., Feb-2009, In : Physical Review. B: Condensed Matter and Materials Physics. 79, 8, p. 081402-1-081402-4 4 p., 081402.

Research output: Contribution to journalArticleAcademicpeer-review

APA

Jozsa, C., Popinciuc, M., Tombros, N., Jonkman, H. T., & van Wees, B. J. (2009). Controlling the efficiency of spin injection into graphene by carrier drift. Physical Review. B: Condensed Matter and Materials Physics, 79(8), 081402-1-081402-4. [081402]. https://doi.org/10.1103/PhysRevB.79.081402

Author

Jozsa, C. ; Popinciuc, M. ; Tombros, N. ; Jonkman, H. T. ; van Wees, B. J. / Controlling the efficiency of spin injection into graphene by carrier drift. In: Physical Review. B: Condensed Matter and Materials Physics. 2009 ; Vol. 79, No. 8. pp. 081402-1-081402-4.

Harvard

Jozsa, C, Popinciuc, M, Tombros, N, Jonkman, HT & van Wees, BJ 2009, 'Controlling the efficiency of spin injection into graphene by carrier drift', Physical Review. B: Condensed Matter and Materials Physics, vol. 79, no. 8, 081402, pp. 081402-1-081402-4. https://doi.org/10.1103/PhysRevB.79.081402

Standard

Controlling the efficiency of spin injection into graphene by carrier drift. / Jozsa, C.; Popinciuc, M.; Tombros, N.; Jonkman, H. T.; van Wees, B. J.

In: Physical Review. B: Condensed Matter and Materials Physics, Vol. 79, No. 8, 081402, 02.2009, p. 081402-1-081402-4.

Research output: Contribution to journalArticleAcademicpeer-review

Vancouver

Jozsa C, Popinciuc M, Tombros N, Jonkman HT, van Wees BJ. Controlling the efficiency of spin injection into graphene by carrier drift. Physical Review. B: Condensed Matter and Materials Physics. 2009 Feb;79(8):081402-1-081402-4. 081402. https://doi.org/10.1103/PhysRevB.79.081402


BibTeX

@article{02793be4456c499490ea47265c415dc7,
title = "Controlling the efficiency of spin injection into graphene by carrier drift",
abstract = "Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room-temperature nonlocal spin valve measurements in cobalt/aluminum-oxide/graphene structures with an injection efficiency as high as 18%, where electrical contact is achieved through relatively transparent regions in the oxide. This value is further enhanced to 31% by applying a dc current bias on the injector electrodes, which causes carrier drift away from the contact. A reverse bias reduces the ac spin valve signal to zero or negative values. We introduce a model that quantitatively predicts the behavior of the spin accumulation in the graphene under such circumstances, showing a good agreement with our measurements.",
keywords = "aluminium compounds, carbon, cobalt, electrical contacts, ferromagnetic materials, nanostructured materials, spin valves, ROOM-TEMPERATURE",
author = "C. Jozsa and M. Popinciuc and N. Tombros and Jonkman, {H. T.} and {van Wees}, {B. J.}",
year = "2009",
month = feb,
doi = "10.1103/PhysRevB.79.081402",
language = "English",
volume = "79",
pages = "081402--1--081402--4",
journal = "Physical Review. B: Condensed Matter and Materials Physics",
issn = "0163-1829",
publisher = "AMER PHYSICAL SOC",
number = "8",

}

RIS

TY - JOUR

T1 - Controlling the efficiency of spin injection into graphene by carrier drift

AU - Jozsa, C.

AU - Popinciuc, M.

AU - Tombros, N.

AU - Jonkman, H. T.

AU - van Wees, B. J.

PY - 2009/2

Y1 - 2009/2

N2 - Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room-temperature nonlocal spin valve measurements in cobalt/aluminum-oxide/graphene structures with an injection efficiency as high as 18%, where electrical contact is achieved through relatively transparent regions in the oxide. This value is further enhanced to 31% by applying a dc current bias on the injector electrodes, which causes carrier drift away from the contact. A reverse bias reduces the ac spin valve signal to zero or negative values. We introduce a model that quantitatively predicts the behavior of the spin accumulation in the graphene under such circumstances, showing a good agreement with our measurements.

AB - Electrical spin injection from ferromagnetic metals into graphene is hindered by the impedance mismatch between the two materials. This problem can be reduced by the introduction of a thin tunnel barrier at the interface. We present room-temperature nonlocal spin valve measurements in cobalt/aluminum-oxide/graphene structures with an injection efficiency as high as 18%, where electrical contact is achieved through relatively transparent regions in the oxide. This value is further enhanced to 31% by applying a dc current bias on the injector electrodes, which causes carrier drift away from the contact. A reverse bias reduces the ac spin valve signal to zero or negative values. We introduce a model that quantitatively predicts the behavior of the spin accumulation in the graphene under such circumstances, showing a good agreement with our measurements.

KW - aluminium compounds

KW - carbon

KW - cobalt

KW - electrical contacts

KW - ferromagnetic materials

KW - nanostructured materials

KW - spin valves

KW - ROOM-TEMPERATURE

U2 - 10.1103/PhysRevB.79.081402

DO - 10.1103/PhysRevB.79.081402

M3 - Article

VL - 79

SP - 081402-1-081402-4

JO - Physical Review. B: Condensed Matter and Materials Physics

JF - Physical Review. B: Condensed Matter and Materials Physics

SN - 0163-1829

IS - 8

M1 - 081402

ER -

ID: 1974649