Publication

Complementary circuits based on solution processed low-voltage organic field-effect transistors

Ball, J. M., Wöbkenberg, P. H., Kooistra, F. B., Hummelen, J. C., Leeuw, D. M. D., Bradley, D. D. C. & Anthopoulos, T. D., Nov-2009, In : Synthetic Metals. 159, 21-22, p. 2368-2370 3 p.

Research output: Contribution to journalArticleAcademicpeer-review

APA

Ball, J. M., Wöbkenberg, P. H., Kooistra, F. B., Hummelen, J. C., Leeuw, D. M. D., Bradley, D. D. C., & Anthopoulos, T. D. (2009). Complementary circuits based on solution processed low-voltage organic field-effect transistors. Synthetic Metals, 159(21-22), 2368-2370. https://doi.org/10.1016/j.synthmet.2009.08.019

Author

Ball, James M. ; Wöbkenberg, Paul H. ; Kooistra, Floris B. ; Hummelen, Jan C. ; Leeuw, Dago M. de ; Bradley, Donal D.C. ; Anthopoulos, Thomas D. / Complementary circuits based on solution processed low-voltage organic field-effect transistors. In: Synthetic Metals. 2009 ; Vol. 159, No. 21-22. pp. 2368-2370.

Harvard

Ball, JM, Wöbkenberg, PH, Kooistra, FB, Hummelen, JC, Leeuw, DMD, Bradley, DDC & Anthopoulos, TD 2009, 'Complementary circuits based on solution processed low-voltage organic field-effect transistors', Synthetic Metals, vol. 159, no. 21-22, pp. 2368-2370. https://doi.org/10.1016/j.synthmet.2009.08.019

Standard

Complementary circuits based on solution processed low-voltage organic field-effect transistors. / Ball, James M.; Wöbkenberg, Paul H.; Kooistra, Floris B.; Hummelen, Jan C.; Leeuw, Dago M. de; Bradley, Donal D.C.; Anthopoulos, Thomas D.

In: Synthetic Metals, Vol. 159, No. 21-22, 11.2009, p. 2368-2370.

Research output: Contribution to journalArticleAcademicpeer-review

Vancouver

Ball JM, Wöbkenberg PH, Kooistra FB, Hummelen JC, Leeuw DMD, Bradley DDC et al. Complementary circuits based on solution processed low-voltage organic field-effect transistors. Synthetic Metals. 2009 Nov;159(21-22):2368-2370. https://doi.org/10.1016/j.synthmet.2009.08.019


BibTeX

@article{5198b8c8ee404c4d8fc1b416b7612e84,
title = "Complementary circuits based on solution processed low-voltage organic field-effect transistors",
abstract = "The field of organic electronics is advancing quickly towards ultra low-cost, low-end applications and is expected to provide the necessary technology required for flexible/printed electronics. Here we address the need for solution processed low-voltage complementary logic in order to reduce power consumption of organic circuits and hence enable their use in portable, i.e. battery-powered applications. We demonstrate both p- and n-channel solution processed high performance organic field-effect transistors that operate at voltages below vertical bar 1.5 vertical bar V. The reduction in operating voltage is achieved by implementing ultrathin gate dielectrics based on solution processed self-assembled monolayers. This work demonstrates the feasibility of fabricating low-voltage complementary organic circuits by means of solution processing. (C) 2009 Elsevier B.V. All rights reserved.",
keywords = "OFET, Organic field-effect transistor, Low-voltage, Fullerene, P3HT, Self-assembled monolayer dielectric, Phosphonic acid, Organic complementary logic, Inverter, SELF-ASSEMBLED MONOLAYER",
author = "Ball, {James M.} and W{\"o}bkenberg, {Paul H.} and Kooistra, {Floris B.} and Hummelen, {Jan C.} and Leeuw, {Dago M. de} and Bradley, {Donal D.C.} and Anthopoulos, {Thomas D.}",
note = "Relation: https://www.rug.nl/scheikunde/onderzoek/scholen/stratingh/index date_submitted:2010 Rights: University of Groningen, Stratingh Institute for Chemistry",
year = "2009",
month = nov,
doi = "10.1016/j.synthmet.2009.08.019",
language = "English",
volume = "159",
pages = "2368--2370",
journal = "Synthetic Metals",
issn = "0379-6779",
publisher = "Elsevier Science",
number = "21-22",

}

RIS

TY - JOUR

T1 - Complementary circuits based on solution processed low-voltage organic field-effect transistors

AU - Ball, James M.

AU - Wöbkenberg, Paul H.

AU - Kooistra, Floris B.

AU - Hummelen, Jan C.

AU - Leeuw, Dago M. de

AU - Bradley, Donal D.C.

AU - Anthopoulos, Thomas D.

N1 - Relation: https://www.rug.nl/scheikunde/onderzoek/scholen/stratingh/index date_submitted:2010 Rights: University of Groningen, Stratingh Institute for Chemistry

PY - 2009/11

Y1 - 2009/11

N2 - The field of organic electronics is advancing quickly towards ultra low-cost, low-end applications and is expected to provide the necessary technology required for flexible/printed electronics. Here we address the need for solution processed low-voltage complementary logic in order to reduce power consumption of organic circuits and hence enable their use in portable, i.e. battery-powered applications. We demonstrate both p- and n-channel solution processed high performance organic field-effect transistors that operate at voltages below vertical bar 1.5 vertical bar V. The reduction in operating voltage is achieved by implementing ultrathin gate dielectrics based on solution processed self-assembled monolayers. This work demonstrates the feasibility of fabricating low-voltage complementary organic circuits by means of solution processing. (C) 2009 Elsevier B.V. All rights reserved.

AB - The field of organic electronics is advancing quickly towards ultra low-cost, low-end applications and is expected to provide the necessary technology required for flexible/printed electronics. Here we address the need for solution processed low-voltage complementary logic in order to reduce power consumption of organic circuits and hence enable their use in portable, i.e. battery-powered applications. We demonstrate both p- and n-channel solution processed high performance organic field-effect transistors that operate at voltages below vertical bar 1.5 vertical bar V. The reduction in operating voltage is achieved by implementing ultrathin gate dielectrics based on solution processed self-assembled monolayers. This work demonstrates the feasibility of fabricating low-voltage complementary organic circuits by means of solution processing. (C) 2009 Elsevier B.V. All rights reserved.

KW - OFET

KW - Organic field-effect transistor

KW - Low-voltage

KW - Fullerene

KW - P3HT

KW - Self-assembled monolayer dielectric

KW - Phosphonic acid

KW - Organic complementary logic

KW - Inverter

KW - SELF-ASSEMBLED MONOLAYER

U2 - 10.1016/j.synthmet.2009.08.019

DO - 10.1016/j.synthmet.2009.08.019

M3 - Article

VL - 159

SP - 2368

EP - 2370

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 21-22

ER -

ID: 5008557