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Complementary circuits based on solution processed low-voltage organic field-effect transistors

Ball, J. M., Wöbkenberg, P. H., Kooistra, F. B., Hummelen, J. C., Leeuw, D. M. D., Bradley, D. D. C. & Anthopoulos, T. D., Nov-2009, In : Synthetic Metals. 159, 21-22, p. 2368-2370 3 p.

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DOI

  • James M. Ball
  • Paul H. Wöbkenberg
  • Floris B. Kooistra
  • Jan C. Hummelen
  • Dago M. de Leeuw
  • Donal D.C. Bradley
  • Thomas D. Anthopoulos

The field of organic electronics is advancing quickly towards ultra low-cost, low-end applications and is expected to provide the necessary technology required for flexible/printed electronics. Here we address the need for solution processed low-voltage complementary logic in order to reduce power consumption of organic circuits and hence enable their use in portable, i.e. battery-powered applications. We demonstrate both p- and n-channel solution processed high performance organic field-effect transistors that operate at voltages below vertical bar 1.5 vertical bar V. The reduction in operating voltage is achieved by implementing ultrathin gate dielectrics based on solution processed self-assembled monolayers. This work demonstrates the feasibility of fabricating low-voltage complementary organic circuits by means of solution processing. (C) 2009 Elsevier B.V. All rights reserved.

Original languageEnglish
Pages (from-to)2368-2370
Number of pages3
JournalSynthetic Metals
Volume159
Issue number21-22
Publication statusPublished - Nov-2009

    Keywords

  • OFET, Organic field-effect transistor, Low-voltage, Fullerene, P3HT, Self-assembled monolayer dielectric, Phosphonic acid, Organic complementary logic, Inverter, SELF-ASSEMBLED MONOLAYER

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