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Atomic layer deposition of SiO2-GeO2 multilayers

Antoja Lleonart, J., Zhou, S., de Hond, K., Huang, S., Koster, G., Rijnders, A. J. H. M. G. & Noheda, B., 27-Jul-2020, In : Applied Physics Letters. 117, 4, 5 p., 041601.

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  • Atomic layer deposition of SiO2–GeO2multilayers

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DOI

Despite its potential for CMOS applications, atomic layer deposition (ALD) of GeO2 thin films, by itself or in combination with SiO2, has not been widely investigated yet. Here, we report the ALD growth of SiO2/GeO2 multilayers on si1icon substrates using a so far unexplored Ge precursor. The characterization of multilayers with various periodicities reveals layer-by-layer growth with electron density contrast and the absence of chemical intermixing, down to a periodicity of two atomic layers.

Original languageEnglish
Article number041601
Number of pages5
JournalApplied Physics Letters
Volume117
Issue number4
Publication statusPublished - 27-Jul-2020

    Keywords

  • OPTICAL-PROPERTIES, GEO2, PRECURSOR, SIO2, OXIDES, FILMS

ID: 130107058